Chemischer Informationsdienst
 1973
DOI: 10.1002/chin.197313019
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ChemInform Abstract: WECHSELWIRKUNG ZWISCHEN PHOTORESISTS UND METALLEN UND OXIDEN WAEHREND DES AETZENS DURCH HOCHFREQUENZZERSTAEUBUNG

J. L. Vossen1,
E. B. Davidson2

Abstract: Bei Verwendung von Photoresists als Masken für das Hochfrequenzzerstäubungsätzen verschiedener Materialien werden infolge einer Rückstreuung von zerstäubtem Material Wechselwirkungen zwischen Photoresist und dem geätzten Material beobachtet.

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