ChemInform Abstract: THE PHOTOCURRENT‐VOLTAGE CHARACTERISTICS OF THE HETEROJUNCTION COMBINATION N‐SILICON/TIN(IV) OXIDE/REDOX ELECTROLYTE

Decker, F.; Fracastoro‐Decker, M.; Badawy, W. A.; Doblhofer, Karl; Gerischer, H.

doi:10.1002/chin.198408012

Cited by 5 publications

(7 citation statements)

References 1 publication

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“…The Using the same fabrication procedure, SIS photoanodes have been used in photoelectrochemical cells with Fe(CN)~ 4-~3- (18,19). In these experiments, the main factor governing the J-V shape under high illumination intensities has been attributed to the charge transfer overvoltages (19) and not to a voltage drop in series resistances as it is found in this work.…”

Section: Resultsmentioning

confidence: 62%

Characteristics and Stability of n ‐ Si / SnO2 and n ‐ Si / SnO2 / Pt Photoanodes

Bélanger

Dodelet

Lombos

1986

J. Electrochem. Soc.

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The photoanode behavior of the solid‐state SIS heterojunction normaln‐normalSi/SiOx/SnO2 is analyzed in aqueous solution with various redox systems [ normalFefalse(CN)64−/3− , I−/I3− , Fe2+/3+ , hydroquinone/benzoquinone, normalFefalse(EDTA)2−/1− , normalFefalse(normalo‐normalphenantroline)2+/3+ ]. The solid‐state device has better performance characteristics than any of the photoelectrochemical systems. Photovoltaic activity is lost in contact with an electrolyte by the presence of charge transfer and diffusion overvoltages. SnO2 stabilizes n‐Si against the photocorrosion but limits the use of performing redox systems to the ones having good charge transfer kinetics at the SnO2/normalelectrolyte interface. In a first section, the charge transfer at normalTi/SnO2 and normalTi/SnO2/normalPt interfaces is determined. For all the redox used, platinization of normalTi/SnO2 increases the heterogeneous rate constant, k0 , between one to two orders of magnitude. A second section deals with the platinization of normaln‐normalSi/SnO2 and its influence upon the J‐V characteristics of the SIS photoanode. It is found that platinization has practically no influence on the J‐V curves when normalFefalse(CN)64−/3− is used. With this redox, the characteristics are mainly affected by the series resistance of the entire cell and by the limiting diffusion currents but not by the charge transfer at the SnO2/normalelectrolyte interface. normalFefalse(EDTA)2−/− or normalFefalse(normalo‐normalphen)2+/3+ which are expected, on the basis of their k0 values to behave like normalFefalse(CN)64−/3− on unplatinized normaln‐normalSi/SnO2 are either not soluble enough or absorbing too much in the visible to yield comparable currents. The most drastic improvement upon platinization is observed with I−/I3− and Fe2+/3+ . The performances of the platinized normaln‐normalSi/SnO2 photoanodes decrease with the elapsed time. It is mainly due to a coalescence of the Pt islands electrodeposited onto SnO2 . The stability is drastically improved for a few cells showing a larger density of smaller Pt islands compared to the typical Pt morphology usually obtained by electrodeposition.

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Section: Resultsmentioning

confidence: 62%

Characteristics and Stability of n ‐ Si / SnO2 and n ‐ Si / SnO2 / Pt Photoanodes

Bélanger

Dodelet

Lombos

1986

J. Electrochem. Soc.

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“…In spite of the fact that the extent Ru doping did not exceed 1 at% in the oxide film matrix as determined by ESCA [10], the power characteristics of the prepared cells are significantly improved [27]. The presence of the porous Si layer did not affect the open-circuit potential of the cells but a remarkable increase in the short circuit current was recorded.…”

Section: Photovoltaic and Photoelectrochemical Characteristicsmentioning

confidence: 97%

“…In our lab we are trying to combine the improvement made to the photovoltaic and photoelectrochemical solar cells based on n-Si single crystals [9][10][11][12][13][14][15][16][17][18][19][20][21][22] with the expected increase of the short circuit current by the presence of porous Si layer on the top of the Si wafer. The increase of the short circuit current will lead to higher solar conversion efficiencies.…”

Section: Introductionmentioning

confidence: 99%

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Effect of porous silicon layer on the performance of Si/oxide photovoltaic and photoelectrochemical cells

Badawy

2008

Journal of Alloys and Compounds

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“…We (1) and others (2)(3)(4)(5) have also shown how redox kinetics at this overlayer plays a crucial role in the solar-conversion efficiency of devices based on this "heterojunction-photoelectrode" concept. We (1) and others (2)(3)(4)(5) have also shown how redox kinetics at this overlayer plays a crucial role in the solar-conversion efficiency of devices based on this "heterojunction-photoelectrode" concept.…”

mentioning

confidence: 88%

Heterojunction Photoelectrodes: IV . Electrochemistry and Photoelectrochemistry at Indium Tin Oxide/Nonaqueous Electrolyte Interfaces

Rajeshwar²

1987

J. Electrochem. Soc.

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The kinetic facility of charge transfer was studied by cyclic voltammetry (CV) at Smdoped indium oxide (ITO) electrode/acetonitrile interfaces for 18 one-electron outer-sphere redox systems. The results were compared with Pt, and the relative trends in redoxkinetics were analyzed from a phenomenological viewpoint. The strong dependency of redox kinetics at the ITO surface on the location of electrolyte energy levels (redox potential) argues against the complete transparency of the space-charge layer in ITO to electron tunneling processes. The new results seem to be consistent with a model proposed by previous authors, which considers mediation of electron tunneling by deep-lying donor states in the space-charge region. For positive-lying redox systems, this mediation step is rate determining. For redox systems lying at potentials negative enough to overlap with the ITO conduction bandedge, a direct and facile charge transfer process seems to prevail. The implications of these kinetics trends in the use of ITO electrodes as a corrosion-resistant coating for n-Si and p-Si photoelectrode surfaces are next analyzed using CV and steady-state voltammetry. Correlations of the photopotentials measured at n-Si/ITO and p-Si/ITO for selected nonaqueous redox systems with redox potentials and kinetics parameters are finally presented, and the trends compared with "naked" Si surfaces. It is shown that CV is a more sensitive probe of kinetics effects than the steady-state scanning mode. ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 138.251.14.35 Downloaded on 2015-04-13 to IP ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 138.251.14.35 Downloaded on 2015-04-13 to IP

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ChemInform Abstract: THE PHOTOCURRENT‐VOLTAGE CHARACTERISTICS OF THE HETEROJUNCTION COMBINATION N‐SILICON/TIN(IV) OXIDE/REDOX ELECTROLYTE

Cited by 5 publications

References 1 publication

Characteristics and Stability of n ‐ Si / SnO2 and n ‐ Si / SnO2 / Pt Photoanodes

Characteristics and Stability of n ‐ Si / SnO2 and n ‐ Si / SnO2 / Pt Photoanodes

Effect of porous silicon layer on the performance of Si/oxide photovoltaic and photoelectrochemical cells

Heterojunction Photoelectrodes: IV . Electrochemistry and Photoelectrochemistry at Indium Tin Oxide/Nonaqueous Electrolyte Interfaces

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