ChemInform Abstract: Systematic and Controllable Negative, Zero, and Positive Thermal Expansion in Cubic Zr1‐xSnxMo2O8.

Tallentire, Sarah E.; Child, Felicity; Fall, I.; Vella‐Żarb, Liana; Evans, Ivana Radosavljević; Tucker, Matthew G.; Keen, David A.; Wilson, Claire; Evans, John S. O.

doi:10.1002/chin.201352002

Cited by 9 publications

(12 citation statements)

References 1 publication

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“…One is toward composite NTE compounds with PTE compounds, like ZrO 2 /ZrW 2 O 8 24 and Mn 3 Cu 0.5 Ge 0.5 N/Cu. 25 The other is toward adjusting the thermal expansion of NTE compounds by element substitution, 13,26,27 guest ion embedding, 28−30 and nanocrystallization. 17,31,32 Owing to the stable and convenient in structure and synthesis, the study of single phase low/zero thermal expansion oxides have attracted extensive attention, and some low/zero thermal expansion materials have been achieved in Zr 0.4 Sn 0.6 Mo 2 O 8 (12−600 K), 27 0.5PbTiO 3 -0.5(Bi 0.8 La 0.2 )FeO 3 (300−675 K), 33 and Zn 4 B 6 O 13 (13−270 K).…”

Section: ■ Introductionmentioning

confidence: 99%

Anomalous Thermal Expansion in Ta₂WO₈ Oxide Semiconductor over a Wide Temperature Range

et al. 2021

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Expansion of material is one of the major impediments in the high precision instrument and engineering field. Low/ zero thermal expansion compounds have drawn great attention because of their important scientific significance and enormous application value. However, the realization of low thermal expansion over a wide temperature range is still scarce. In this study, a low thermal expansion over a wide temperature range has been observed in the Ta 2 WO 8 oxide semiconductor. It is a balance effect of the negative thermal expansion of the a axis and the positive thermal expansion of the b axis and the c axis to achieve low thermal expansion behavior. The results of the means of variable temperature X-ray diffraction and variable pressure Raman spectroscopy analysis indicated that the transverse vibration of bridging oxygen atoms is the driving force, which is corresponding to the lowfrequency lattice modes with a negative Gruneisen parameter. The present study provides one wide band gap semiconductor Ta 2 WO 8 with anomalous thermal expansion behavior.

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Section: ■ Introductionmentioning

confidence: 99%

Anomalous Thermal Expansion in Ta₂WO₈ Oxide Semiconductor over a Wide Temperature Range

et al. 2021

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“…For thermal expansion UCNs, upconversion emissions decline with increasing temperature because of the decreased energy transfer efficiency and increased nonradiative relaxation. Interestingly, negative thermal expansion (NTE) has been observed in compounds with open frameworks, 119,120 in which thermal quenching can be potentially overcome. For example, the unit cell volume of orthorhombic Yb 2 W 3 O 12 :Er NTE materials decreased gradually as the temperature increased from 303 to 573 K (Figure 5a).…”

Section: Engineering Local Structure By External Field Regulationmentioning

confidence: 99%

Local Structure Engineering in Lanthanide-Doped Nanocrystals for Tunable Upconversion Emissions

2021

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Upconversion emissions from lanthanide-doped nanocrystals have sparked extensive research interests in nanophotonics, biomedicine, photovoltaics, photocatalysis, etc. Rational modulation of upconversion emissions is highly desirable to meet the requirements of specific applications. Among the diverse developed methods, local structure engineering is fundamentally feasible, through which the upconversion emission intensity, selectivity, wavelength shift, and lifetime can be tuned effectively. The underlying mechanism of the local-structure-dependent upconversion emissions lies in the degree of parity hybridization and energy level splitting of lanthanide ions as well as the interionic energy transfer efficiency. Over the past few years, there has been significant progress in local-structure-engineered upconversion emissions. In this Perspective, we first introduce the principles of upconversion emissions and typical characterization methods for local structure. Subsequently, we summarize recent achievements in tuning of upconversion emissions through local structure engineering, including host composition adjustment, external field regulation, and interfacial strain management. Finally, we propose a few perspectives that should tackle the current bottlenecks. This Perspective is expected to deepen the understanding of local-structure-dependent upconversion emissions and arouse adequate attention to the engineering of local structure for desired properties of inorganic nanocrystals.

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“…PTE can be explained well on the basis of population of the higher energy vibrational levels which cause the bond expansion due to asymmetric nature of a typical interatomic potential. 1 However, many devices that are expected to operate under extreme conditions, for example, low or very high temperature, need to be engineered without any volume expansion and degradation. The materials with NTE or ZTE are highly desirable for both exactitude engineering of various components for nanodevices and of complex bulk systems.…”

Section: Introductionmentioning

confidence: 99%

Anisotropic Near-Zero Thermal Expansion in REAg_xGa_4–x (RE = La–Nd, Sm, Eu, and Yb) Induced by Structural Reorganization

et al. 2018

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In this work, we have discovered the anisotropic near Zero Thermal Expansion (NZTE)_ behavior in a family of compounds REAgxGa4-x (RE = LaNd , Sm, Eu and Yb). The compouds adopts CeAl2Ga2 structure type. were obtained as single crystals in high yield by metal flux growth technique using gallium as active flux. Synthesized compounds with space group I4/mmm. Temperature dependent single crystal X-ray diffraction suggests that all the compounds exhibit zero thermal expansion along c direction in the temperature range of 100-450 K. Temperature dependent X-Ray absorption near edge spectroscopic study confirmed ZTE behavior is due to the geometrical features associated within the crystal structure. The anisotropic NZTE behavior was further established by anisotropic magnetic measurements on selected single crystals. The atomic displacement parameters, apparent bond lengths, bond angles, and structural distortion with respect to the temperature reveal that geometric features associated with the structural distortion cause the anisotropic NZTE along c-direction. The preliminary magnetic studies suggest all the compounds are paramagnetic at room temperature except LaAgGa3. Electrical resistivity study reveals that compounds from this series are metallic in nature.

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ChemInform Abstract: Systematic and Controllable Negative, Zero, and Positive Thermal Expansion in Cubic Zr_1‐xSn_xMo₂O₈.

Abstract: Samples of cubic Zr1‐xSnxMo2O8 (0.2 ≤ x ≤ 1) are prepared by coprecipitation of aqueous ZnCl4 and ZrOCl2 with (NH4)6Mo7O24 followed by a controlled heating step (853 K, 0.5 h, heating rate of 2 K/min).

Cited by 9 publications

References 1 publication

Anomalous Thermal Expansion in Ta₂WO₈ Oxide Semiconductor over a Wide Temperature Range

Anomalous Thermal Expansion in Ta₂WO₈ Oxide Semiconductor over a Wide Temperature Range

Local Structure Engineering in Lanthanide-Doped Nanocrystals for Tunable Upconversion Emissions

Anisotropic Near-Zero Thermal Expansion in REAg_xGa_4–x (RE = La–Nd, Sm, Eu, and Yb) Induced by Structural Reorganization

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ChemInform Abstract: Systematic and Controllable Negative, Zero, and Positive Thermal Expansion in Cubic Zr1‐xSnxMo2O8.

Abstract: Samples of cubic Zr1‐xSnxMo2O8 (0.2 ≤ x ≤ 1) are prepared by coprecipitation of aqueous ZnCl4 and ZrOCl2 with (NH4)6Mo7O24 followed by a controlled heating step (853 K, 0.5 h, heating rate of 2 K/min).

Cited by 9 publications

References 1 publication

Anomalous Thermal Expansion in Ta2WO8 Oxide Semiconductor over a Wide Temperature Range

Anomalous Thermal Expansion in Ta2WO8 Oxide Semiconductor over a Wide Temperature Range

Local Structure Engineering in Lanthanide-Doped Nanocrystals for Tunable Upconversion Emissions

Anisotropic Near-Zero Thermal Expansion in REAgxGa4–x (RE = La–Nd, Sm, Eu, and Yb) Induced by Structural Reorganization

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ChemInform Abstract: Systematic and Controllable Negative, Zero, and Positive Thermal Expansion in Cubic Zr_1‐xSn_xMo₂O₈.

Anomalous Thermal Expansion in Ta₂WO₈ Oxide Semiconductor over a Wide Temperature Range

Anomalous Thermal Expansion in Ta₂WO₈ Oxide Semiconductor over a Wide Temperature Range

Anisotropic Near-Zero Thermal Expansion in REAg_xGa_4–x (RE = La–Nd, Sm, Eu, and Yb) Induced by Structural Reorganization