ChemInform Abstract: SILICON DIOXIDE AS MASKING FILM IN ALKALINE ETCHING

Barycka, Irena; Teterycz, Helena

doi:10.1002/chin.198025003

Chemischer Informationsdienst

1980

DOI: 10.1002/chin.198025003

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ChemInform Abstract: SILICON DIOXIDE AS MASKING FILM IN ALKALINE ETCHING

Irena Barycka¹,

Helena Teterycz²

Abstract: Mit dem Ziel, die billige NaOH als Substitut für organische Basen zum Ätzen von Si zu verwenden, wird die Ätzbeständigkeit von 0.5 ‐1 .3 um dicken SiOz‐Filmen gegen 30 Gew.‐proz. NaOH im Temp.‐ Bereich 350‐375 K untersucht.

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“…tion of thickness and without lithographic processing. Etching in alkaline solution is particularly sensitive to the crystallographic orientation of silicon (7,8) and thus the course of the etching process will depend significantly on the orientation of the wafers used.…”

mentioning

confidence: 99%

Use of an Electron Beam to Separate Semiconductor Devices with Beam Leads

Barycka

Boratyński

Ohly

et al. 1981

J. Electrochem. Soc.

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The division of silicon wafers covered with diodes, transistors, or integrated circuits into single structures presents a major difficulty in the manufacture of silicon devices with beam leads. The commonly used technique for division is laborious, since it involves m a n y processes.The wafer to be divided is first thinned down to a thickness of about 100 #m, then is coated (vacuum or CVD) with an SiO2 film and photoresist and the areas to be etched are uncovered by photolithographic techniques. These uncovered areas are then etched in an alkaline solution. The procedure of matching the photomask with the patterns being on the opposite side of the wafer is very difficult, and the thinning of the wafer reduces its mechanical strength (1-3).The fact that single crystal damaged regions have much higher etch rates than undamaged areas (4, 5) has been used by us as the basis for the separation of semiconductor devices with beam leads.In this paper the results of an investigation using a technique utilizing an electron beam are presented. The electron beam was used to generate damage on selected areas of the silicon wafer (6). The damaged regions, which now have an increased etching rate, would enable the division of the wafer without reduc-

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mentioning

confidence: 99%

Use of an Electron Beam to Separate Semiconductor Devices with Beam Leads

Barycka

Boratyński

Ohly

et al. 1981

J. Electrochem. Soc.

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“…The examined SiO 2 films were successfully used as masking material in thin silicon membranes production (7)…”

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confidence: 99%

Silicon Dioxide as Masking Film in Alkaline Etching

Barycka

Teterycz

1980

J. Electrochem. Soc.

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Anisotropic etching of selected areas of silicon surfaces in alkaline solutions is often applied in technology of silicon semiconductor devices, for example for making grooves, dividing structures, or in production of thin silicon membranes (1-5).In the two last examples, when a large etch depth ca. 200 ~m is needed, the etch resistance of the masking film is of special importance.The use of SiO 2 films mad~ by silicon wafer oxidation as masking material is well justified for technical reasons.Selected areas of the surface are exposed to etching solution by simple photolithography.It should be emphasized that the shape of hole or groove, especially in the case of deep etching, depends much more on the crystal strucutre than on the precision of lithography.

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ChemInform Abstract: SILICON DIOXIDE AS MASKING FILM IN ALKALINE ETCHING

Abstract: Mit dem Ziel, die billige NaOH als Substitut für organische Basen zum Ätzen von Si zu verwenden, wird die Ätzbeständigkeit von 0.5 ‐1 .3 um dicken SiOz‐Filmen gegen 30 Gew.‐proz. NaOH im Temp.‐ Bereich 350‐375 K untersucht.

Cited by 2 publications

References 1 publication

Use of an Electron Beam to Separate Semiconductor Devices with Beam Leads

Use of an Electron Beam to Separate Semiconductor Devices with Beam Leads

Silicon Dioxide as Masking Film in Alkaline Etching

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