ChemInform Abstract: SiH4‐WF6 Gas‐Phase Nucleated Tungsten as an Adhesion Layer in Blanket Chemical Vapor Deposition for Ultralarge Scale Integration.

Abstract

technology of materials, lasers, semiconductors, superconductors technology of materials, lasers, semiconductors, superconductors V 1500 -280SiH4-WF6 Gas-Phase Nucleated Tungsten as an Adhesion Layer in Blanket Chemical Vapor Deposition for Ultralarge Scale Integration.-The deposition rate, step coverage, and resistivity of a thin W film, nucleated by an in situ low-pressure SiH4-WF6 gas phase reaction are studied with regard to an application as adhesion layer replacing TiN in a blanket CVD-W process. The deposition rates ranging from 360 to 3000 nm/min increase with increasing deposition pressure and temperature and fall to zero below 150 • C and at a SiH4/WF6 flow ratio below 1.6. The resistivity of 167 µΩ cm is comparable to that of TiN. Above 200 • C the film exhibits a good adhesive strength. A two-step deposition technique is developed including formation of the adhesive layer followed by a typical CVD-W process to obtain a thick W film. -(CHANG, K.-M.; YEH, T.-H.; WANG, S.-W.; LI, C.-H.; J.