ChemInform Abstract: Scanning Electron Microscopy and Transmission Electron Microscopy Study of Ferroelectric Domains in Doped BaTiO<sub>3</sub>.

Hu, Yongda; Chan, Helen M.; Wen, Zhao; Harmer, Martin P.

doi:10.1002/chin.198644012

Cited by 1 publication

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“…Figure 3F is a schematic drawing of the stripe domain structure with a-c domain bands, which was first reported in BaTiO 3 . 11 The grains in this case are divided into bands by special boundaries Ι consisting of alternating stripes of 90 and 180 • domain walls. The stress sources inside the grains are localized on the domain wall junctions.…”

Section: Domain Structures At Room Temperaturementioning

confidence: 99%

Ultra‐high‐temperature piezoelectric responses and ultra‐high thermal stability of piezoelectricity in ceramic PbZr_0.54Ti_0.46O₃

Chen

Xing

et al. 2022

J Am Ceram Soc.

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To date, most piezoceramics with a high piezoelectric coefficient (d 33 > 500 pC/N) and a high Curie temperature (T C around 400 • C) are BiScO 3 -PbTiO 3 -based (BS-PT-based) systems, containing the rare-earth element Sc, whose high cost hinders mass production. We investigated the effect of Nddoping on the morphotropic phase boundary and synthesized low-cost Nd-doped PbZr 0.54 Ti 0.46 O 3 (PZT) piezoceramics, achieving high piezoelectric performance. At room temperature, the piezoelectric coefficient d 33 reached 550 pC/N with a T C = 375 • C and this changed by only 3.6% over a broad temperature range (30-260 • C). The d 33 value reached an ultra-high value of 941 pC/N at 345 • C, which is higher than that of a BS-PT-based ceramic (810 pC/N at 350 • C). The developed PZT ceramic material has a superior electrostrictive strain of 0.45% at 40 kV/cm, and a room temperature piezoelectric coefficient d 33 * of 1312 pm/V at 20 kV/cm.Our research provides a new paradigm for designing piezoceramics that can be used over a wide temperature range.

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Section: Domain Structures At Room Temperaturementioning

confidence: 99%

Ultra‐high‐temperature piezoelectric responses and ultra‐high thermal stability of piezoelectricity in ceramic PbZr_0.54Ti_0.46O₃

Chen

Xing

et al. 2022

J Am Ceram Soc.

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ChemInform Abstract: Scanning Electron Microscopy and Transmission Electron Microscopy Study of Ferroelectric Domains in Doped BaTiO₃.

Abstract: It is demonstrated (hat SEM and TEM can be used for the identification of domain structures.

Cited by 1 publication

References 1 publication

Ultra‐high‐temperature piezoelectric responses and ultra‐high thermal stability of piezoelectricity in ceramic PbZr_0.54Ti_0.46O₃

Ultra‐high‐temperature piezoelectric responses and ultra‐high thermal stability of piezoelectricity in ceramic PbZr_0.54Ti_0.46O₃

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ChemInform Abstract: Scanning Electron Microscopy and Transmission Electron Microscopy Study of Ferroelectric Domains in Doped BaTiO3.

Abstract: It is demonstrated (hat SEM and TEM can be used for the identification of domain structures.

Cited by 1 publication

References 1 publication

Ultra‐high‐temperature piezoelectric responses and ultra‐high thermal stability of piezoelectricity in ceramic PbZr0.54Ti0.46O3

Ultra‐high‐temperature piezoelectric responses and ultra‐high thermal stability of piezoelectricity in ceramic PbZr0.54Ti0.46O3

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ChemInform Abstract: Scanning Electron Microscopy and Transmission Electron Microscopy Study of Ferroelectric Domains in Doped BaTiO₃.

Ultra‐high‐temperature piezoelectric responses and ultra‐high thermal stability of piezoelectricity in ceramic PbZr_0.54Ti_0.46O₃

Ultra‐high‐temperature piezoelectric responses and ultra‐high thermal stability of piezoelectricity in ceramic PbZr_0.54Ti_0.46O₃