ChemInform Abstract: PREPARATION AND ELECTRICAL PROPERTIES OF GALLIUM NITRIDE LAYERS

Sidorov, V. G.; Sveshkova, L. S.; Shagalov, M. D.; Shalabutov, Yu. K.; Lysenko, V. F.; Kopeliovich, E. S.; Pepelyaev, V. Yu.

doi:10.1002/chin.197713027

Cited by 1 publication

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“…The bottom of the conduction band in GaN is well approximated by a parabolic dispersion relation, although a slight anisotropy ͑resulting from the reduced lattice symme-try͒ is not ruled out. 327 In early studies, Barker and Illegems 328 obtained an effective mass of 0.20m 0 from plasma reflection measurements, Rheinlander and Neumann 329 inferred 0.27m 0 from the Faraday rotation, and Sidorov et al 330 derived values of 0.1m 0 -0.28m 0 , depending on what primary scattering channel was assumed, from fits to the thermoelectric power. Other early values may be found in the reviews from the 1970s.…”

Section: Wurtzite Ganmentioning

confidence: 99%

Band parameters for III–V compound semiconductors and their alloys

Vurgaftman

Meyer

Ram‐Mohan

2001

Journal of Applied Physics

6,607

289

3,822

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, along with their ternary and quaternary alloys. Based on a review of the existing literature, complete and consistent parameter sets are given for all materials. Emphasizing the quantities required for band structure calculations, we tabulate the direct and indirect energy gaps, spin-orbit, and crystal-field splittings, alloy bowing parameters, effective masses for electrons, heavy, light, and split-off holes, Luttinger parameters, interband momentum matrix elements, and deformation potentials, including temperature and alloy-composition dependences where available. Heterostructure band offsets are also given, on an absolute scale that allows any material to be aligned relative to any other.

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Section: Wurtzite Ganmentioning

confidence: 99%