ChemInform Abstract: Phase Diagram of the TlGaSe₂ ‐ TlInSe₂ System and Photoelectrical Properties of TlGa_1‐xIn_xSe₂ Single Crystals.

Abstract

Mit DTA, Röntgen‐Phasen‐Analysen (XPA), Mikrostruktur‐Analysen, Messung der Mikrohärte und der Widerstände werden die Bereiche der Mischkristallbildung im Titelsystem bestimmt, die bei 0‐55.0 und 70‐100mol‐% TlInSe2 liegen.

Electronic properties and phase transitions in low-dimensional semiconductors

“…The values of the energy band gaps [31-39, 41, 58] of the layered compounds are given in table 3. The band gap variation in the mixed crystals with layered TlGaSe 2 -type structure has been reported in [22,23,[42][43][44]. E.g., in the mixed (TlGaSe 2 ) 1−x (TlInS 2 ) x single crystals, the energy band gap varies linearly with x for 0 x 0.4; it deviates from linearity at x = 0.6 [43].…”

“…Composition variations of the lattice parameters in TlGa(S 1−x Se x ) 2 layered mixed crystals have been reported by Gasanly et al [19]. For more detailed information about the structure of such mixed compounds, we refer the reader to [19][20][21][22][23][24][25][26]. Furthermore, composition variations of the lattice parameters in Tl 2x In 2(1−x) Se 2 layered mixed crystals have been reported by Hatzisymeon et al [27].…”

“…The photoconductivity occurs due to the excitation of carriers from the valence band and impurity levels to the conduction band. For more detailed information about photoconductive characteristics of TlX and TlMX 2 crystals and their solid solutions, the reader is referred to [22,23,32,33,42,43,58,[71][72][73][74][75][76][77][78][79][80][81].…”

Low-temperature visible photoluminescence spectra of Tl2GaInSe4layered crystals

“…mixed crystals, is a very common one. The experimental studies carried out on TlGaSe 2 and TlInSe 2 demonstrate that investigations into the physical properties of the TlGaSe 2 -TlInSe 2 system should be rewarding in view of the production of a new candidate material for optical devices in the visible range [7,13].…”

“…In spite of its importance in technological applications as a candidate material for optical devices and also for the understanding of its basic physics, there are only a few studies on the physical properties of Tl 2 GaInSe 4 , namely photoconductivity (PC) data [13], Raman spectra (RS) [14], optical absorption (OA) spectra and temperature dependence of the bandgap [15]. The photoluminescence (PL) properties of TlInS 2 , TlGaS 2 , TlGaSe 2 and Tl 2 InGaS 4 layered III-III-VI 2 crystals have also been investigated recently by some researchers [16][17][18][19].…”