ChemInform Abstract: OX. VON GAP IN WAESSRIGER H2O2‐LOESUNG

Schwartz, Benjamin S.; Sundburg, W. J.

doi:10.1002/chin.197325051

Cited by 2 publications

(4 citation statements)

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“…It is apparent that after rapid initial growth the resistance of the oxide limits the current flow, retarding the layer growth. The resistivity of the as-grown oxide on GaAs is apparently much higher than that in GaP where only the exponential decrease of I with V was observed in the first 10 rain of anodization (2).…”

mentioning

confidence: 85%

“…The thickness and index of refraction of the oxide were measured with an ellipsometer using procedures described for similar studies of the oxidation of GaP (2). The layer thickness was also measured with a Talystep (Taylor-Hobson Company) by measuring the step height formed where the oxide was locally dissolved in HC1.…”

Section: Methodsmentioning

confidence: 99%

“…All thickness measurements reported here were performed on samples which were dried by heating in air for 1 hr at 95~ followed by heating for 2 hr at 250~ This procedure was developed in similar studies in GaP (2) where it was designed to remove water from the oxide layers where measurements indicated that the drying procedure reduced the layer thickness ,--20%. The layer thickness, t, and the index of refraction, n, of the as-grown layer on GaAs were often indistinguishable from those of dried layers but occasionally were both 10% greater in t and lower in n. Due to the reproducible results obtained using the dried oxide layers the drying procedure was routinely followed in obtaining the results described here.…”

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confidence: 99%

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The Anodic Oxidation of GaAs in Aqueous H[sub 2]O[sub 2] Solution

Logan¹,

Schwartz²,

Sundburg³

1973

J. Electrochem. Soc.

100

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The characteristics of normalGaAs anodization at constant applied voltage, V, in a concentrated (30%) H2O2 electrolyte are examined in detail. Uniform oxides, with a refractive index of 1.8 and oxide thickness, t, proportional to V, are grown over the pH range 1–6. The pH can be adjusted by the addition of NH4OH or H3PO4 to the electrolyte but the presence of other common acids at concentrations of a few parts per million can transform the anodization process into an etching procedure. In 10 min anodizations at pH=2,18Aå;/V of oxide are grown and 12Aå/Vnormalof GaAs are consumed on chemically polished surfaces (for V≤225V ). The resistance of the electrolyte causes significant voltage drops in the electrolyte at all pH values and limits the initial current flow. Most of the oxide is grown during the initial anodization (typically in the first minute) where the current is decreasing rapidly with time and the voltage drop across the oxide is increasing. The oxide is insoluble in the HNO3 but is soluble in most other acids and bases. Limited MOS measurements yield a dielectric constant of 5.4 and a breakdown field of 3×106V/normalcm . The use of the oxide as a mask for chemical etching was demonstrated by forming passive optical waveguides in normalGaAlAs‐normalGaAs‐normalGaAlAs epitaxial layers.

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mentioning

confidence: 85%

Section: Methodsmentioning

confidence: 99%

mentioning

confidence: 99%

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The Anodic Oxidation of GaAs in Aqueous H[sub 2]O[sub 2] Solution

Logan¹,

Schwartz²,

Sundburg³

1973

J. Electrochem. Soc.

100

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“…If a plot of (Cox~C) 2 vs. V is constructed from experimental C-V data, Eq. [3] can be used to obtain values of 1ND --NA] and Vfb. This determination of ]ND --NA!…”

Section: Discussionmentioning

confidence: 99%

Electrical Properties of a Native Oxide on Gallium Phosphide

Spitzer¹,

Schwartz²,

Kühn³

1973

J. Electrochem. Soc.

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A vitreous native oxide can be grown on normalGaP by oxidation in a concentrated solution of hydrogen peroxide, and this oxide effectively passivates normalGaP light‐emitting devices. This paper reports the first electrical characterization of this native oxide. Electrical measurements were performed on MOS structures prepared by growing a native oxide film 500–1000AÅ thick on the false(true111¯false) face of an n‐ or p‐type normalGaP wafer and evaporating an Au field plate on the oxide. The refractive index of the oxide film was 1.58. Current‐voltage and capacitance‐voltage characteristics show that the native oxide is an electrical insulator, with a low frequency dielectric constant ε≈5.5 , and a dielectric breakdown strength of 6–8×106V/normalcm after annealing in nitrogen at 250°C. Current‐voltage behavior shows a linear dependence of In J normalon E½ , typical of field‐enhanced thermionic emission. The I‐V characteristics are nonsymmetric with respect to field plate polarity, suggesting the conduction mechanism to be surface‐barrier‐controlled emission, with a barrier height φnormalb≈1.2 normaleV , as determined from the temperature dependence of the I‐V characteristics. The dielectric constant determined from the slope of the I‐V characteristics by using a field‐enhanced thermionic emission model agrees with the value obtained from capacitance measurements. Capacitance‐voltage characteristics show accumulation and deep depletion behavior. Analysis of deep depletion curves yields a surface charge density Qnormals≈4×1012/cm2 for both p‐ and n‐type normalGaP samples. Values of |ND−NA| for the normalGaP substrates obtained from deep depletion data are in good agreement with the values obtained from Hall measurements on the substrate material.

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ChemInform Abstract: OX. VON GAP IN WAESSRIGER H2O2‐LOESUNG

Abstract: Die Kinetik der normalen und der anodischen Oxidation von GaP in wäßrigem H2O2 wird untersucht.

Cited by 2 publications

References 1 publication

The Anodic Oxidation of GaAs in Aqueous H[sub 2]O[sub 2] Solution

The Anodic Oxidation of GaAs in Aqueous H[sub 2]O[sub 2] Solution

Electrical Properties of a Native Oxide on Gallium Phosphide

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