“…Thus, Newman et al [2] proposed Ga3Te2 (54.96 wt % Te), the compound Ga2+=T% is proposed by Semiletov and Vlasov [12], with a cubic cell ofa = I0.32A, Lissauskas and Yasutis [13] working on thin films proposed the compound GasTe4 (70.93wt% Te), with a rhombohedral unit cell of a = 10.10A and a = 89~ ', Newman etal. [2] also reported the compound GaTes (84.59wt%T3), with an hexagonal cell ofa = 6.43A and c = 14.20A and finally Alapini et al [3] presented the compound Ga2Tes (82.06wt% Te) with an hexagonal cell of a = 7.913A and c = 6.848A. All these compounds, except the Ga3Tea proposed by Lisauskas and Yasutis [13], are outside the region of the compositions GaTe-Ga2Te3.…”