Generic mixtures in the system (Zr,Hf)O2-(Nb,Ta)2O5 are employed as tunable gate materials for field-effect transistors. Whereas production processes and target compositions are well-defined, resulting crystal structures are vastly unexplored. In this study, we summarize the sparse reported findings and present the new phase Hf3Ta2O11 as synthesized via a sol-gel route. Its commensurately modulated structure represents the hitherto unknown, metal(V)-richest member of the family (Zr,Hf)x(Nb,Ta)2O2x+5. Based on electron, neutron, and X-ray diffraction, the crystal structure is described within modern superspace [Hf1.2Ta0.8O4.4, Z = 2, a = 4.7834(13), b = 5.1782(17), c = 5.064(3) Å, q = ⅕c*, orthorhombic, superspace group Xmcm(00γ)s00] and supercell formalisms [Hf3Ta2O11, Z = 4, a = 4.7834(13), b = 5.1782(17), c = 25.320(13) Å, orthorhombic, space group Pbnm]. Transmission electron microscopy shows the microscopic structure from film-like aggregates down to atomic resolution. Cation ordering within the different available coordination environments is possible, but no significant hint at it is found within the limits of standard diffraction techniques. Hf3Ta2O11 is an unpredicted compound in the abovementioned oxide systems, in which stability ranges have been disputably fuzzy and established only by syntheses via solid-state routes so far. model. To settle this matter finally, neutron diffraction with an exceptionally high signal-to-noise ratio at 2θ < 25° would be needed to overcome diagnostic uncertainty. ASSOCIATED CONTENT Supporting Information. The Supporting Information is available free of charge on the ACS Publications website at DOI: Additional figures and tables: diffraction pattern with fit of an α-PbO2-type model, ellipsoid plots, stereoview of crystal structure, bond lengths, de-Wolff sections, and Bärnighausen tree (PDF). Accession Codes. CCDC 1861844-1861847 contain the supplementary crystallographic data for this paper. These data can be obtained free of charge from The Cambridge Crystallographic Data Centre via www.ccdc.cam.ac.uk/structures. Copyright Notice. The TOC graphic is a derivative work of "P-Channel MOSFET 20V 24Alow Vgs(th)" 39 by SparkFun Electronics, used under CC BY 2.0. 40