Abstract:Mit Hilfe der Ionenrückstreuungsanalyse wird die Bildung von CugS‐Schichten auf CdS‐Einkristallen in wäßriger CuCl‐Lösung entsprechend der Gleichung A in Abhängigkeit von der kristallographischen Orientierung des CdS‐Substrates und dessen Oberflächenbehandlung untersucht.
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