Chemischer Informationsdienst
 1980
DOI: 10.1002/chin.198008004
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ChemInform Abstract: HETEROEPITAXIAL SILICON GROWTH USING SILICON HYDRIDE (SIH4) IN HELIUM‐HYDROGEN ATMOSPHERES

H. M. Manasevit1

Abstract: Die Anwendung von H2/He‐Gemischen anstelle reiner H2‐ oder He‐Atmosphären hat auf die Abscheidung von Si auf Spinell‐ und Sapphirsubstraten einen günstigen Einfluß.

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