ChemInform Abstract: ELEKTRISCHE UND PHOTOELEKTRISCHE EIGENSCHAFTEN VON TLGAS2‐, TLGASE2‐ UND TLINS2‐EINKRISTALLEN

Karpovich, I. A.; Chervova, A. A.; Demidova, L. I.; Leonov, E. I.; Орлов, В. М.

doi:10.1002/chin.197214014

Cited by 2 publications

(2 citation statements)

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“…On the other hand, the ε 0 ‐type screening fits well into the obtained picture. Even the room temperature value of the obtained ε practically coincides with that (∼26) reported long ago for ε 0 of TlInS 2 by Karpovich et al . But, the most important evidence is the temperature behavior of the reciprocal screening shown in Fig.…”

Section: Resultssupporting

confidence: 88%

Band gap exciton in ferroelectric TlInS₂: Dimensionality and screening

Mamedov

Shim

Okada

et al. 2015

Physica Status Solidi (b)

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This work reports two-dimensionality of band-gap exciton in layered ferroelectric TlInS 2 , accessed by spectroscopic phase modulated ellipsometry in a wide range of temperatures embracing normal, incommensurate, and commensurate phases of this material. A significant decrease in exciton binding energy is observed upon approaching the temperature region of the incommensurate phase on cooling or heating. The effective static rather than optic dielectric screening is shown to be responsible for the observed behavior of exciton binding energy that remains larger than the energy of the longitudinaloptical phonon at all accessed temperatures. The temperature dependence of this screening is remarkable in that it obeys Currie-Weiss law. The values of the exciton's reduced mass and three-dimensional effective Bohr radius are obtained. The former keeps constant to be 0.928 the mass of the free electron while the latter irregularly changes with temperature, remaining within 14-19 Ålimits. The last values correspond to the doubled thickness of a single layer.

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Section: Resultssupporting

confidence: 88%

Band gap exciton in ferroelectric TlInS₂: Dimensionality and screening

Mamedov

Shim

Okada

et al. 2015

Physica Status Solidi (b)

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“…The photoconductivity occurs due to the excitation of carriers from the valence band and impurity levels to the conduction band. For more detailed information about photoconductive characteristics of TlX and TlMX 2 crystals and their solid solutions, the reader is referred to [22,23,32,33,42,43,58,[71][72][73][74][75][76][77][78][79][80][81].…”

Section: Transport Properties Under Ambient Conditionsmentioning

confidence: 99%

Electronic properties and phase transitions in low-dimensional semiconductors

Panich

2008

J. Phys.: Condens. Matter

141

127

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We present the first review of the current state of the literature on electronic properties and phase transitions in TlX and TlMX2 (M = Ga, In; X = Se, S, Te) compounds. These chalcogenides belong to a family of the low-dimensional semiconductors possessing chain or layered structure. They are of significant interest because of their highly anisotropic properties, semi- and photoconductivity, nonlinear effects in their I–V characteristics (including a region of negative differential resistance), switching and memory effects, second harmonic optical generation, relaxor behavior and potential applications for optoelectronic devices. We review the crystal structure of TlX and TlMX2 compounds, their transport properties under ambient conditions, experimental and theoretical studies of the electronic structure, transport properties and semiconductor–metal phase transitions under high pressure, and sequences of temperature-induced structural phase transitions with intermediate incommensurate states. The electronic nature of the ferroelectric phase transitions in the above-mentioned compounds, as well as relaxor behavior, nanodomains and possible occurrence of quantum dots in doped and irradiated crystals is discussed.

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ChemInform Abstract: ELEKTRISCHE UND PHOTOELEKTRISCHE EIGENSCHAFTEN VON TLGAS2‐, TLGASE2‐ UND TLINS2‐EINKRISTALLEN

Cited by 2 publications

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Band gap exciton in ferroelectric TlInS₂: Dimensionality and screening

Band gap exciton in ferroelectric TlInS₂: Dimensionality and screening

Electronic properties and phase transitions in low-dimensional semiconductors

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ChemInform Abstract: ELEKTRISCHE UND PHOTOELEKTRISCHE EIGENSCHAFTEN VON TLGAS2‐, TLGASE2‐ UND TLINS2‐EINKRISTALLEN

Cited by 2 publications

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Band gap exciton in ferroelectric TlInS2: Dimensionality and screening

Band gap exciton in ferroelectric TlInS2: Dimensionality and screening

Electronic properties and phase transitions in low-dimensional semiconductors

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Band gap exciton in ferroelectric TlInS₂: Dimensionality and screening

Band gap exciton in ferroelectric TlInS₂: Dimensionality and screening