ChemInform Abstract: A Low Band Gap Iron Sulfide Hybrid Semiconductor with Unique 2D [Fe₁₆S₂₀]^8‐ Layer and Reduced Thermal Conductivity.

Abstract

DMSO, and en (autoclave, and characterized by single crystal XRD, XAS, and thermal conductivity measurements. The compound crystallizes in the monoclinic space group P2 1 /c with Z = 4. The structure contains a unique two-dimensional [Fe16S20] 8-layer. It is a low band gap semiconductor with an estimated band gap of about 0.6-0.8 eV, and exhibits significantly reduced thermal conductivity compared with purely inorganic FeS binary phases. -(WU, M.; RHEE, J.; EMGE, T. J.; YAO, H.; CHENG, J.-H.; THIAGARAJAN, S.; CROFT, M.; YANG, R.; LI*, J.; Chem.