2016
DOI: 10.1002/chin.201630002
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ChemInform Abstract: 3D Transition Metal Ordering and Rietveld Stacking Fault Quantification in the New Oxychalcogenides La2O2Cu2—4xCd2xSe2 .

Abstract: Polycrystalline samples of La2O2Cu2‐4xCd2xSe2 (x = 0—0.5) are prepared by solid state reaction of La2O3 and the elements in the presence of Al powder as O2 getter (Al2O3 crucible in evacuated silica tubes, 1100 °C, 12 h).

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Cited by 6 publications
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“…The layer constitution was derived from the crystal structure of Li 3 ErI 6 . 39 For the refinement, a recursive supercell approach implemented into TOPAS 61,62 was used to calculate PXRD patterns from randomly created stacks of layers and average them. Therefore, the monoclinic unit cell was transformed into a pseudoorthorhombic cell with space group P1 according to a procedure published elsewhere.…”
Section: + → 3lix Hoxmentioning
confidence: 99%
“…The layer constitution was derived from the crystal structure of Li 3 ErI 6 . 39 For the refinement, a recursive supercell approach implemented into TOPAS 61,62 was used to calculate PXRD patterns from randomly created stacks of layers and average them. Therefore, the monoclinic unit cell was transformed into a pseudoorthorhombic cell with space group P1 according to a procedure published elsewhere.…”
Section: + → 3lix Hoxmentioning
confidence: 99%
“…49 Additionally, the 003 basal reflection is split into two overlapping Bragg peaks, suggesting a modulation of the interlayer distance, likely by interstratification effects. Thus, by applying a supercell approach, 50,51 the microstructure of the stacking-faulted dry Li-TS was approximated by a combination of stacking faults and turbostratic disorder as summarized in the following.…”
Section: ■ Experimental Sectionmentioning
confidence: 99%
“…This also indicates that correctly modeling stacking disorder is critical for accurate determination of the intermediate-and long-range structure. While stacking fault analysis has been routinely carried out for various bulk layered compounds using powder XRD data, 29,32,66 only a few examples can be found for heavily stacking faulted small nanoparticles. 67−69 The major advantage for stacking fault analysis (in reciprocal space) for bulk materials lies in the nature of one-dimensional disorder of stacking faults (perfect periodicity within the basal plane), which enables the analytical calculation of the layer structure factors (F hk0 ) when the faults are randomly distributed in the relatively large bulk particles.…”
mentioning
confidence: 99%