Chemie des Aluminiumwasserstoffs und seiner Derivate

Nöth, Heinrich; Wiberg, Egon

doi:10.1007/bfb0051913

Cited by 23 publications

(5 citation statements)

References 156 publications

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“…[ 17a ] However, in the present work, the surface is exposed to a remote H 2 plasma rather than a gas phase oxidant. Nevertheless, in situ QMS (Figure 1c) indicates the evolution of CH 4 , consistent with the following proposed sequential reaction within growth regime (i): [ 18 ]

\begin{array}{*{20}{c}}{ * {\rm{Si}} - {\rm{O}} - {\rm{Al}}{{\left( {{\rm{C}}{{\rm{H}}_3}} \right)}_{2\left( {\rm{s}} \right)}} + 4{{\rm{H}}_{\left( {\rm{g}} \right)}} \to * {\rm{Si}} - {\rm{O}} - {\rm{Al}}{{\rm{H}}_{2\left( {\rm{s}} \right)}} + 2{\rm{C}}{{\rm{H}}_{4\left( {\rm{g}} \right)}}}\end{array}

…”

Section: Resultssupporting

confidence: 78%

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Spatially‐Modulated Silicon Interface Energetics Via Hydrogen Plasma‐Assisted Atomic Layer Deposition of Ultrathin Alumina

Henning

Bartl

Wolz

et al. 2022

Adv Materials Inter

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Atomic layer deposition (ALD) is a key technique for the continued scaling of semiconductor devices, which increasingly relies on scalable processes for interface manipulation of structured surfaces on the atomic level. While ALD allows the synthesis of conformal films with utmost control over the thickness, atomically‐defined closed coatings and surface modifications are challenging to achieve because of 3D growth during nucleation. Here, a route is presented toward the sub‐nanometer thin and continuous aluminum oxide (AlOx) coatings on silicon substrates for the spatial control of the surface charge density and interface energetics. Trimethylaluminum in combination with remote hydrogen plasma is used instead of a gas‐phase oxidant for the transformation of silicon dioxide (SiO2) into alumina. Depending on the number of ALD cycles, the SiO2 can be partially or fully transformed, which is exploited to deposit ultrathin AlOx layers in selected regions defined by lithographic patterning. The resulting patterned surfaces are characterized by lateral AlOx/SiO2 interfaces possessing 0.3 nm step heights and surface potential steps exceeding 0.4 V. In addition, the introduction of fixed negative charges of 9 × 1012 cm−2 enables modulation of the surface band bending, which is relevant to the field‐effect passivation of silicon and low‐impedance charge transfer across contact interfaces.

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\begin{array}{*{20}{c}}{ * {\rm{Si}} - {\rm{O}} - {\rm{Al}}{{\left( {{\rm{C}}{{\rm{H}}_3}} \right)}_{2\left( {\rm{s}} \right)}} + 4{{\rm{H}}_{\left( {\rm{g}} \right)}} \to * {\rm{Si}} - {\rm{O}} - {\rm{Al}}{{\rm{H}}_{2\left( {\rm{s}} \right)}} + 2{\rm{C}}{{\rm{H}}_{4\left( {\rm{g}} \right)}}}\end{array}

…”

Section: Resultssupporting

confidence: 78%

“…[17a] However, in the present work, the surface is exposed to a remote H 2 plasma rather than a gas phase oxidant. Nevertheless, in situ QMS (Figure 1c) indicates the evolution of CH 4 , consistent with the following proposed sequential reaction within growth regime (i): [18] Si…”

Section: Resultsmentioning

confidence: 99%

Spatially‐Modulated Silicon Interface Energetics Via Hydrogen Plasma‐Assisted Atomic Layer Deposition of Ultrathin Alumina

Henning

Bartl

Wolz

et al. 2022

Adv Materials Inter

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“… The aluminum hydride etherate is obtained in situ by the 3/1 molar ratio reaction of lithium aluminum hydride and aluminum trichloride. As this etherate can either lose the ether, forming the polymeric and insoluble (AlH 3 ) ∞ , or add further donor molecules to the aluminum centers, the nature of the reacting silanol (reactivity and bulk of the substituents on silicon) has an important impact on the products formed in the reaction. − …”

Section: Resultsmentioning

confidence: 99%

Synthesis and Characterization of Novel Siloxyalanes

et al. 2006

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The siloxyalanes [(Et3SiOAlH2)2AlH3] n (1), [ t BuMe2SiOAlH2]2 (2), [( t BuMe2SiO)2AlH]2 (3), and [( t BuMe2SiO)5Al2H] (4) have been synthesized and characterized by IR and NMR spectroscopic means. By X-ray diffraction studies on single crystals it was established that molecule 1 is a coordination polymer in the solid state with tetrameric units [Et3SiOAlH2]4 (almost linear Al···Al···Al···Al arrangement) interlinked by Al2H6 groups to form a one-dimensional chain (formal description with neutral building blocks). Compound 3 is dimeric through Al−O contacts with a cis orientation of the hydride ligands with respect to the central Al2O2 cycle. Compound 4 may be described as a double adduct between the two Lewis acid−base compounds ( t BuMe2SiO)2AlH and Al(OSiMe2 t Bu)3. The bulkiness of the substituents on the silicon atoms plays an important role in the aggregation of the compounds. Hydride bridging between molecules or within the molecular entities is only observed in compound 1.

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“…Compounds containing Al-N bonds are important due primarily to their various applications as reducing agents [40], important synthetic intermediates [41,42] and as precursor for chemical vapour deposition of aluminum nitride [43]. This class of compounds containing Al-N bonds also incorporate aluminum imide clusters which are oligomeric in nature and are of the composition (RNAlH)n (n = 4, 6, or 8) [44][45][46].…”

Section: Surface Fluorination Of the Heptameric Aluminum Imide Clustersmentioning

confidence: 99%