Chemically Synthesized Cu₃Se₂ Film Based Flexible Solid-State Symmetric Supercapacitor: Effect of Reaction Bath Temperature

Abstract

Recently, as the importance of energy storage increases, the development of high-performance supercapacitor electrode materials has stimulated a great deal of scientific research. The electrochemical performance of the electrode strongly depends on material structure. In this work, copper selenide (Cu 3 Se 2 ) electrodes are prepared using the chemical bath deposition method in different temperature ranges (323−353 K). The tetragonal crystal structure of the electrodes exhibits the specific surface area of 5.32 m 2 g −1 . This electrode demonstrates excellent specific capacitance of 1285 F g −1 at an applied current density of 0.5 A g −1 and cycling stability of 92% after 3000 galvanostatic charge− discharge (GCD) cycles at 2.5 A g −1 . The solid-state symmetric supercapacitor, Cu 3 Se 2 / PVA−KOH/Cu 3 Se 2 , fabricated using this electrode exhibits a specific capacitance of 132 F g −1 at a scan rate of 5 mV s −1 and stability of 91% after 5000 cyclic voltammetry (CV) cycles at a scan rate of 100 mV s −1 . The flexibility study shows a fabricated supercapacitor device retains 95% specific capacitance at a bending of 165°. This study sheds a light on the possible use of copper selenide in energy storage applications, especially in supercapacitors.

Binder‐Free Synthesis of Mesoporous Nickel Tungstate for Aqueous Asymmetric Supercapacitor Applications: Effect of Film Thickness

“…To test the various resistive parameters of the films, electrochemical impedance spectroscopy (EIS) was performed at potential bias of 5 mV, in a frequency range between 0.1 Hz to 0.1 MHz. The C s (F g −1 ) and specific capacity (mAh g −1 ) were calculated using the following relations [ 29 ] …”

“…To test the various resistive parameters of the films, electrochemical impedance spectroscopy (EIS) was performed at potential bias of 5 mV, in a frequency range between 0.1 Hz to 0.1 MHz. The C s (F g À1 ) and specific capacity (mAh g À1 ) were calculated using the following relations [29]…”

Combined electrochemical and DFT investigations of iron selenide: a mechanically bendable solid-state symmetric supercapacitor

“…Obtained values of the power and energy densities of solid-state devices are also compared with literature values. 31,[90][91][92][93][94][95][96] Table S1 compares the performance of our lab-made cell with previously reported solid-state symmetric supercapacitors based on gel electrolytes. No reasonable change in resistance is observed during investigation of electrochemical impedance spectroscopy (EIS) for fabricated device.…”

Strategically Tuned Ultrathin Nickel Phosphate Nanosheet Thin-Film Electrode as Cathode for High-Power Hybrid Supercapacitor Device

“…Li et al prepared a composite of Ni 3 (PO 4 ) 2 and graphene oxide (GO) by the simple precipitation method. Also, Ni 20 [(OH) 12 (H 2 O) 6 ]­[(HPO 4 ) 8 (PO 4 ) 4 ]·12H 2 O (VSB-5), nickel pyrophosphate (Ni 2 P 2 O 7 ), and nickel phosphite [Ni 11 (HPO 3 ) 8 (OH) 6 ] are prepared by some research groups using simple hydrothermal and co-precipitation methods and studied their supercapacitive performance. − Among numerous synthetic approaches, the chemical bath deposition (CBD) method is prevalent for binder-free preparation of thin-film electrodes . In various works, the effects of reaction time, calcination time, core–shell structure, composite, and doping on nickel phosphate are studied, and the corresponding supercapacitive performances are reported.…”

“…17−26 Among numerous synthetic approaches, the chemical bath deposition (CBD) method is prevalent for binder-free preparation of thin-film electrodes. 27 In various works, the effects of reaction time, calcination time, core−shell structure, composite, and doping on nickel phosphate are studied, and the corresponding supercapacitive performances are reported. Also, pseudocapacitive materials can exhibit charge storage mechanisms from diffusion-controlled (battery type) to surface redox reaction (extrinsic pseudocapacitive) charge storage mechanism with their altered microstructure.…”