Chemically Robust Ambipolar Organic Transistor Array Directly Patterned by Photolithography

Lee, Eun Kwang; Park, Cheol Hee; Lee, Junghoon; Lee, Hae Rang; Yang, Changduk; Oh, Joon Hak

doi:10.1002/adma.201605282

Cited by 61 publications

(62 citation statements)

References 72 publications

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“…The robustness of organic semiconductors toward chemical species such as vaporized organic solvents, liquid‐phase organic solvents, and acidic/basic solutions is more difficult to achieve than robustness toward an aqueous atmosphere because such chemical species can penetrate the film layers more easily than water . The chemical resistance of organic semiconductors in electronics is critical for their advanced applications in chemical/biological sensors that can detect chemical/biological species via direct contact as well as for mass production using wet fabrication processes (e.g., photolithography and wet etching) . Several approaches to enhancing the chemical stability of organic semiconductors have been reported.…”

Section: Approaches To Overcome the Instability Caused By Degradationmentioning

confidence: 99%

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Toward Environmentally Robust Organic Electronics: Approaches and Applications

et al. 2017

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Recent interest in flexible electronics has led to a paradigm shift in consumer electronics, and the emergent development of stretchable and wearable electronics is opening a new spectrum of ubiquitous applications for electronics. Organic electronic materials, such as π-conjugated small molecules and polymers, are highly suitable for use in low-cost wearable electronic devices, and their charge-carrier mobilities have now exceeded that of amorphous silicon. However, their commercialization is minimal, mainly because of weaknesses in terms of operational stability, long-term stability under ambient conditions, and chemical stability related to fabrication processes. Recently, however, many attempts have been made to overcome such instabilities of organic electronic materials. Here, an overview is provided of the strategies developed for environmentally robust organic electronics to overcome the detrimental effects of various critical factors such as oxygen, water, chemicals, heat, and light. Additionally, molecular design approaches to π-conjugated small molecules and polymers that are highly stable under ambient and harsh conditions are explored; such materials will circumvent the need for encapsulation and provide a greater degree of freedom using simple solution-based device-fabrication techniques. Applications that are made possible through these strategies are highlighted.

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Section: Approaches To Overcome the Instability Caused By Degradationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Toward Environmentally Robust Organic Electronics: Approaches and Applications

et al. 2017

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“…Therefore, we synthesized a polythiophene with higher molecular weight and prepared self‐supported cast films, so that the desired mechanical properties were available. Owing to the introduction of disiloxane moiety, the dissolubility and processability of polymer are particularly improved and easily dissolved in organic solvent like hexane or tetrahydrofuran …”

Section: Introductionmentioning

confidence: 99%

Mechanical, Thermal, and Electrical Properties of Flexible Polythiophene with Disiloxane Side Chains

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Fujita

Matsumoto

et al. 2017

Macro Chemistry & Physics

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Poly(3‐hexylthiophene) (P3HT) is widely shown to have considerable advantages in photovoltaic cells, including excellent electrical performance, but its fragility remains a challenge for material applications and processing of stretchable devices. Herein, high‐molecular‐weight and highly regioregular poly(3‐substituted thiophene) with disiloxane moieties in the side chains (P3SiT) is synthesized. An investigation of the molecular structure and physical properties of self‐supported cast films of P3SiT reveals excellent flexible mechanical properties derived from the disiloxane groups in the side chains. The larger fracture strain reaches over 200% compared with that of poly(3‐hexylthiophene) (14%). In addition, its Young's modulus (43 MPa) and low glass transition temperature (−10 °C) result in a typical elastic mechanical property. For the electrical property, the sheet resistivity of the drawn thiophene polymer shows the value almost equal to that of poly(3‐hexylthiophene). The anisotropy of electrical resistivity is observed due to orientation of the drawn polymer.

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“…To further verify this vertical phase separation, we etched the film from the opposite direction of the film and obtained a similar result (Figure S3, Supporting Information). We subsequently used grazing incidence X‐ray diffraction (GIXRD) (Figure S4, Supporting Information), which is widely used for investigating molecular packing in organic thin films, to characterize the molecular self‐assembly of P3HT/PS film. It shows that π‐π packing direction of P3HT is along thin film plane, which is beneficial for the in‐plane charge transport.…”

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confidence: 99%

Printing Semiconductor–Insulator Polymer Bilayers for High‐Performance Coplanar Field‐Effect Transistors

et al. 2017

Advanced Materials

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Source-semiconductor-drain coplanar transistors with an organic semiconductor layer located within the same plane of source/drain electrodes are attractive for next-generation electronics, because they could be used to reduce material consumption, minimize parasitic leakage current, avoid cross-talk among different devices, and simplify the fabrication process of circuits. Here, a one-step, drop-casting-like printing method to realize a coplanar transistor using a model semiconductor/insulator [poly(3-hexylthiophene) (P3HT)/polystyrene (PS)] blend is developed. By manipulating the solution dewetting dynamics on the metal electrode and SiO dielectric, the solution within the channel region is selectively confined, and thus make the top surface of source/drain electrodes completely free of polymers. Subsequently, during solvent evaporation, vertical phase separation between P3HT and PS leads to a semiconductor-insulator bilayer structure, contributing to an improved transistor performance. Moreover, this coplanar transistor with semiconductor-insulator bilayer structure is an ideal system for injecting charges into the insulator via gate-stress, and the thus-formed PS electret layer acts as a "nonuniform floating gate" to tune the threshold voltage and effective mobility of the transistors. Effective field-effect mobility higher than 1 cm V s with an on/off ratio > 10 is realized, and the performances are comparable to those of commercial amorphous silicon transistors. This coplanar transistor simplifies the fabrication process of corresponding circuits.

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Chemically Robust Ambipolar Organic Transistor Array Directly Patterned by Photolithography

Cited by 61 publications

References 72 publications

Toward Environmentally Robust Organic Electronics: Approaches and Applications

Toward Environmentally Robust Organic Electronics: Approaches and Applications

Mechanical, Thermal, and Electrical Properties of Flexible Polythiophene with Disiloxane Side Chains

Printing Semiconductor–Insulator Polymer Bilayers for High‐Performance Coplanar Field‐Effect Transistors

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