2015
DOI: 10.1039/c5cp01561h
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Chemically induced porosity on BiVO4 films produced by double magnetron sputtering to enhance the photo-electrochemical response

Abstract: Double magnetron sputtering (DMS) is an efficient system that is well known because of its precise control of the thin film synthesizing process over any kind of substrate. Here, DMS has been adopted to synthesize BiVO4 films over a conducting substrate (FTO), using metallic vanadium and ceramic Bi2O3 targets simultaneously. The films were characterized using different techniques, such as X-ray diffraction (XRD), UV-Vis spectroscopy, Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), field emission sc… Show more

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Cited by 37 publications
(24 citation statements)
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“…However, the authors stated that defective states, induced by the synthesis procedure, may have caused the higher charge recombination in this particular porous photoanode. Indeed, the synthesis of porous BiVO 4 via another physical deposition technique, that is, double magnetron sputtering, yielded a photocurrent density of 1.2 mA/cm 2 at 1.23 V vs. RHE [61], which is 4-fold greater than the above mentioned bare BiVO 4 that was produced via spin-coating. Besides, similar or better results have recently been obtained by the electrodeposition technique, as described above.…”
Section: Strategiesmentioning
confidence: 99%
“…However, the authors stated that defective states, induced by the synthesis procedure, may have caused the higher charge recombination in this particular porous photoanode. Indeed, the synthesis of porous BiVO 4 via another physical deposition technique, that is, double magnetron sputtering, yielded a photocurrent density of 1.2 mA/cm 2 at 1.23 V vs. RHE [61], which is 4-fold greater than the above mentioned bare BiVO 4 that was produced via spin-coating. Besides, similar or better results have recently been obtained by the electrodeposition technique, as described above.…”
Section: Strategiesmentioning
confidence: 99%
“…AgNO3) [11,19]. Nonetheless, the role of porosity and nanostructuration on s-m BiVO4based thin films has rarely been investigated in PECs [28].…”
Section: Introductionmentioning
confidence: 99%
“…327.8 cm À1 and 362.6 cm À1 , respectively. 16 The peak of BiVO 4 -OV become weaker and wider than BiVO 4 -P, owing to the crystallinity weakening and the lattice distortion, which can manifest some oxygen atoms have been removed from BiVO 4 , resulting in the formation of oxygen vacancy defects. 17 This similar phenomenon also appears in the Raman peaks spectrograms that were employed by laser lines 532 and 785 nm (Fig.…”
mentioning
confidence: 99%