Chemically grafted polyurethane/graphene ternary slurry for advanced chemical–mechanical polishing of single-crystalline SiC wafers

Liu, Hsien‐Kuang; Chen, Chao‐Chang A.; Hsieh, Ping-Chun

doi:10.1007/s00170-022-09241-w

Cited by 3 publications

(2 citation statements)

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“…As summarized in Table 3 , several efficiency‐enhancing methods concerning Fenton‐like reaction, core/shell abrasive particles, FAP, PCMP, and MAS have been combined to form a hybrid polishing system. [ 43,54,99,102,105,111,134–139 ] It can be seen that the synergistic approaches including Fenton‐like reaction combined with FAP, ECMP combined with core–shell abrasives, and PCMP combined with MAS help simultaneously achieve high MRR and good surface quality ( Ra < 0.5 nm).…”

Section: Status and Challenges Of The Chemical–mechanical Polishing (...mentioning

confidence: 99%

“…As summarized in Table 3, several efficiency-enhancing methods concerning Fenton-like reaction, core/shell abrasive particles, FAP, PCMP, and MAS have been combined to form a hybrid polishing system. [43,54,99,102,105,111,[134][135][136][137][138][139] It can be seen that the synergistic approaches including Fenton-like reaction combined with FAP, ECMP combined with core-shell abrasives, and PCMP combined with MAS help simultaneously achieve high MRR and good surface quality (Ra < 0.5 nm). Since the efficiency of CMP is limited by the oxidation of 4H-SiC, researchers have developed synergistic oxidation approaches such as the plasma-assisted electrochemical oxidation, the ultrasonic-assisted electrochemical oxidation, and the electro-assisted photocatalysis oxidation.…”

Section: Other Synergistic Approachesmentioning

confidence: 99%

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Chemical–Mechanical Polishing of 4H Silicon Carbide Wafers

Wang

et al. 2023

Adv Materials Inter

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Abstract4H silicon carbide (4H‐SiC) holds great promise for high‐power and high‐frequency electronics, in which high‐quality 4H‐SiC wafers with both global and local planarization are cornerstones. Chemical–mechanical polishing (CMP) is the key processing technology in the planarization of 4H‐SiC wafers. Enhancing the performance of CMP is critical to improving the surface quality and reducing the processing cost of 4H‐SiC wafers. In this review, the superior properties of 4H‐SiC and the processing of 4H‐SiC wafers are introduced. The development of CMP with chemical, mechanical, and chemical–mechanical synergistic approaches to improve the performance of CMP is systematically reviewed. The basic principle and processing system of each improvement approach are presented. By comparing the material removal rate of CMP and the surface roughness of CMP‐treated 4H‐SiC wafers, the prospect on the chemical, mechanical, and chemical–mechanical synergistic improvement approaches is finally provided.

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Section: Status and Challenges Of The Chemical–mechanical Polishing (...mentioning

confidence: 99%