results in improved kinetics for H2 evolution from the p-type semiconductor. Kinetics for H2 evolution was previously identified as a major problem at p-semiconductor aqueous electrolyte interfaces (1-3). Surface modification of electrodes has recently been an active area of research, and examples of electrocatalysts are emerging (4). To produce an efficient photosensitive interface from which to evolve H2 we take advantage of the light absorption and charge separating properties of a semiconductor (5-8). But additionally we employ surface modification to achieve good H2 evolution kinetics. A p-type semiconductor should serve as a photocathode, because the minority carrier is the electron, e-. As indicated in Fig. 1, the photoexcited electron becomes available at the interface as a reducing equivalent with reducing power no greater than the bottom of the conduction band at the interface ECB. Efficient solar-driven electrolysis requires: (i) use of a photocathode having a small Eg, 1-2 eV; (ii) optimization of the product of Ev and photocurrent; and (iii) a durable interface. Experiments show that Ev can be significant for small Eg photocathodes, but the kinetics for H2 evolution are so poor that little if any efficiency can be realized for p-type Si (Eg =