Chemically deposited Sn-doped PbS thin films for infrared photodetector applications

Abstract

Lead sulfide is a potential infrared (IR) photodetector material because of its favorable optoelectronic properties. The physical and chemical properties of PbS can be modified by a systematic doping of elements. In this study, we have doped 1-3 at% of Sn into PbS by a chemical bath deposition method. The undoped PbS films exhibited cubic crystal structure with a lattice parameter of a = 0.594 nm , an uneven grain growth, a direct optical band gap of 0.44 eV and a hole mobility of 8.9 cm 2 V −1 s −1 . The Sn-doping has improved the microstructure and slightly decreased the band gap of PbS. The hole mobility of PbS films has increased to 20 cm 2 V −1 s −1 with Sn-doping (1-2 at%). Thus, the PbS films grown by Sn-doping with improved microstructure, decreased band gap, and increased electrical properties are beneficial for IR photodetector applications.

Terahertz Detectors for 6G Technology Using Quantum Dot 3D Concave Convergence Microwheel Arrays

“…In Figure e, the peaks belong to the Pb 4f 5/2 and Pb 4f 7/2 , respectively. In Figure f, the peak is related to S 2p . Two THz emitters (TeraSense IMPATT diodes) with the frequency of 0.14 and 0.28 THz were employed as the THz sources.…”

“…In Figure 3f, the peak is related to S 2p. 19 Two THz emitters (TeraSense IMPATT diodes) with the frequency of 0.14 and 0.28 THz were employed as the THz sources. A high-precision picoammeter (Keithley 6485) was used to record the light and dark current.…”

“…Recently, semiconductor colloidal quantum dots (QDs) have been intensively studied and used in optoelectronic devices due to tunability band gap in a large energy range, high light absorption coefficients, and low cost. , Lead sulfide (PbS) QDs with a small optical band gap and strong quantum confinement are quite suitable as photodetectors. , In addition, QD materials are often used as photodetectors because of their adjustable absorption band gap with physical size, the ability to be processed in solution for easy device integration, low dark current, and low crosstalk. In addition, the QD material can be integrated into the THz imaging chip research to reduce the cost of detectors.…”

“…17 (PbS) QDs with a small optical band gap and strong quantum confinement are quite suitable as photodetectors. 19,20 In addition, QD materials are often used as photodetectors because of their adjustable absorption band gap with physical size, the ability to be processed in solution for easy device integration, low dark current, and low crosstalk. In addition, the QD material can be integrated into the THz imaging chip research to reduce the cost of detectors.…”

Reversible Thermal Conductivity Modulation of Non-equilibrium (Sn1–xPbx)S by 2D–3D Structural Phase Transition above Room Temperature

“…The previously reported solid-solution limit of the 2D-layered (Sn 1−x Pb x )S prepared by the equilibrium synthesis process is x = 0.4− 0.5, 15−17 and that of the 3D cubic (Sn 1−x Pb x )S is only x = 0.90−0.97. 18,19 The solid solution of materials with different crystal structures generally has a low solubility limit owing to the enthalpy term arising from the chemical bonding difference. However, we consider that the solubility limit can be increased at high temperatures because the entropy term has a greater contribution with increasing temperatures.…”