2015
DOI: 10.1038/srep14091
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Chemical Visualization of a GaN p-n junction by XPS

Abstract: We report on an operando XPS investigation of a GaN diode, by recording the Ga2p3/2 peak position under both forward and reverse bias. Areal maps of the peak positions under reverse bias are completely decoupled with respect to doped regions and allow a novel chemical visualization of the p-n junction in a 2-D fashion. Other electrical properties of the device, such as leakage current, resistivity of the domains are also tapped via recording line-scan spectra. Application of a triangular voltage excitation ena… Show more

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Cited by 10 publications
(7 citation statements)
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References 57 publications
(73 reference statements)
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“…By exposing the dielectric surface to a constant flow of either electrons or X-rays, both positive and negative charging of a dielectric grown on a semiconductor were achieved. The experimentally determined photoemission intensities, including broadening and peak shifts, were modeled by making some basic assumptions regarding semiconductor band bending, potential profile across the oxide, and possible defects states in the film. Cohen and co-workers have extended the application of flood gun charging strategies to a wider class of interfaces using the phrase “chemically resolved electrical measurements” to describe their method. Suzer et al have performed extensive XPS-based measurements on defects and charging effects in oxides and have also recently explored in-plane surface potential variations using XPS imaging on in-plane biased structures. Lastly, Kobayashi et al, have applied a bias across a metal/oxide/semiconductor (MOS) stack using 3 nm Pt films as top electrodes and performed XPS in order to model the oxide defects density based on the evolution of the substrate band bending. In all these studies, however, the determination of the potential profile across an entire stack was never performed.…”
mentioning
confidence: 99%
“…By exposing the dielectric surface to a constant flow of either electrons or X-rays, both positive and negative charging of a dielectric grown on a semiconductor were achieved. The experimentally determined photoemission intensities, including broadening and peak shifts, were modeled by making some basic assumptions regarding semiconductor band bending, potential profile across the oxide, and possible defects states in the film. Cohen and co-workers have extended the application of flood gun charging strategies to a wider class of interfaces using the phrase “chemically resolved electrical measurements” to describe their method. Suzer et al have performed extensive XPS-based measurements on defects and charging effects in oxides and have also recently explored in-plane surface potential variations using XPS imaging on in-plane biased structures. Lastly, Kobayashi et al, have applied a bias across a metal/oxide/semiconductor (MOS) stack using 3 nm Pt films as top electrodes and performed XPS in order to model the oxide defects density based on the evolution of the substrate band bending. In all these studies, however, the determination of the potential profile across an entire stack was never performed.…”
mentioning
confidence: 99%
“…The emission efficiency and homogeneity of our LEDs could be improved by increasing the conductivity of the GaN and ZnO films, smoothing the interface between p-GaN and n-ZnO, and optimizing the device geometries, etc. More detailed XPS characterizations, especially operando XPS, could give valuable insight on the lighting mechanism. All of these warrant future investigations.…”
Section: Resultsmentioning
confidence: 99%
“…The AMQ is then adsorbed by coulombic attraction at the steel surface, where iodide ions are already adsorbed by chemisorption. Stabilization of adsorbed iodide ions by means of electrostatic interaction with AMQ leads to greater surface coverage and thereby, greater inhibition 11 . The strong synergistic inhibition of AMQ with halide and cation mixture makes Inhibition efficiency, % the corrosion potential (E corr ) shift to anodic direction.…”
Section: Electrochemical Measurementsmentioning
confidence: 99%