Chemical vapor deposition processes for the fabrication of epitaxial Si-O superlattices

Jayachandran, Suseendran; Delabie, Annelies; Maggen, Jens; Caymax, Matty; Loo, Roger; Meersschaut, Johan; Lenka, H. P.; Vandervorst, Wilfried; Heyns, Marc

doi:10.1016/j.tsf.2013.10.079

Cited by 10 publications

(22 citation statements)

References 18 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…0.7-0.9 atomic layers, for which the epitaxial deposition of Si can be realized. For 0.7 atomic layer, the epitaxial thickness is 30 nm, in agreement with the previously reported transmission electron microscopy results [14,20]. Between 0.7 and 0.9 atomic layers, the epitaxial thickness decreases.…”

Section: Impact Of the O-content On The Si Depositionsupporting

confidence: 91%

“…Note that besides O-content, the epitaxial ordering of the deposited Si also depends on the Si growth rate, which was previously suggested [20] and is beyond the scope of this study.…”

Section: Impact Of the O-content On The Si Depositionmentioning

confidence: 72%

“…It has been shown previously that for a fixed Ocontent of 0.7 atomic layers, epitaxial deposition can be obtained [14,20]. However, a transition from epitaxial to amorphous Si was observed, with a limited epitaxial thickness of ∼30 nm.…”

Section: Impact Of the O-content On The Si Depositionmentioning

confidence: 89%

“…The wafers are cooled down to 350 • C in H 2 to leave the surface H terminated [29]. The amount of O contamination during the transport from the CVD to the ALD reactor (without O deposition) has previously been measured to be 3 × 10 13 O atoms/cm 2 , which is an order of magnitude lower than the targeted O-content [20], with one atomic layer corresponding to 6.78 × 10 14 O atoms/cm 2 .…”

Section: Methodsmentioning

confidence: 99%

See 3 more Smart Citations

Deposition of O atomic layers on Si(100) substrates for epitaxial Si-O superlattices: investigation of the surface chemistry

Jayachandran

Delabie

Billen

et al. 2015

Applied Surface Science

Self Cite

View full text Add to dashboard Cite

Section: Impact Of the O-content On The Si Depositionsupporting

confidence: 91%

“…Note that besides O-content, the epitaxial ordering of the deposited Si also depends on the Si growth rate, which was previously suggested [20] and is beyond the scope of this study.…”

Section: Impact Of the O-content On The Si Depositionmentioning

confidence: 72%

Section: Impact Of the O-content On The Si Depositionmentioning

confidence: 89%

Section: Methodsmentioning

confidence: 99%

See 2 more Smart Citations

Deposition of O atomic layers on Si(100) substrates for epitaxial Si-O superlattices: investigation of the surface chemistry

Jayachandran

Delabie

Billen

et al. 2015

Applied Surface Science

Self Cite

View full text Add to dashboard Cite

“…[4], [5] and [6]. Different device structures have been utilized to enable DLTS: either a p-n junction [4], a Metal-Oxide-Semiconductor (MOS) capacitor, based on Al2O3 gate dielectric or an Al Schottky barrier, evaporated on the Si:C epi layer.…”

Section: Methodsmentioning

confidence: 99%

Study of electrically active defects in epitaxial layers on silicon

Simoen

Dhayalan

Jayachandran

et al. 2016

2016 China Semiconductor Technology International Conference (CSTIC)

View full text Add to dashboard Cite

Electrically active defects in silicon-based epitaxial layers on silicon substrates have been studied by Deep-Level Transient Spectroscopy (DLTS). Several aspects have been investigated, like, the impact of the pre-epi cleaning conditions and the effect of a post-deposition anneal on the deep-level properties. It is shown that the pre-cleaning thermal budget has a strong influence on the defects at the substrate/epi layer interface. At the same time, a post-deposition Forming Gas Anneal can passivate to a large extent the active defect states. Finally, it is shown that application of a post-deposition anneal increases the out-diffusion of carbon from a Si:C stressor layer into the p-type CZ substrate.

show abstract

A deep-level transient spectroscopy study of p-type silicon Schottky barriers containing a Si-O superlattice

Simoen

Jayachandran

Delabie

et al. 2016

Phys. Status Solidi B

Self Cite

View full text Add to dashboard Cite

The presence of deep levels in a silicon–oxygen (Si–O) superlattice (SL) deposited on p‐type silicon substrates has been investigated by deep‐level transient spectroscopy (DLTS) on thermally evaporated Cr Schottky barriers (SBs). The SLs have been fabricated with different thicknesses of the silicon interlayers, formed by chemical vapor deposition. It is shown that a broad band of hole traps is present near the surface of the SB, which is associated with the SL. In addition, the activation energy corresponding with the peak maximum shifts to higher values with respect to the valence band and gives rise to a higher trap concentration with increasing silicon interlayer thickness. It is proposed that these states are associated with the structural defects found in similar SL structures, that is, with the epitaxial quality and not with the SiO bonds in the atomic layers. The change in the DLT‐spectra with silicon thickness could be related with the transformation of the structural defects from small self‐interstitial clusters to stacking faults.

show abstract

Chemical vapor deposition processes for the fabrication of epitaxial Si-O superlattices

Cited by 10 publications

References 18 publications

Deposition of O atomic layers on Si(100) substrates for epitaxial Si-O superlattices: investigation of the surface chemistry

Deposition of O atomic layers on Si(100) substrates for epitaxial Si-O superlattices: investigation of the surface chemistry

Study of electrically active defects in epitaxial layers on silicon

A deep-level transient spectroscopy study of p-type silicon Schottky barriers containing a Si-O superlattice

Contact Info

Product

Resources

About