2019
DOI: 10.1039/c9ce00488b
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Chemical vapor deposition of titanium nitride thin films: kinetics and experiments

Abstract: Titanium nitride (TiN) films were grown by chemical vapor deposition (CVD) from titanium chlorides, ammonia (NH3) and hydrogen (H2) on single crystal c-plane sapphire, WC–Co, stainless steel and amorphous graphite substrates. The preferred orientation and color of TiN layer are studied by combining a simplified kinetic model with experiments.

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Cited by 28 publications
(18 citation statements)
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“…Indeed, TiN has intrinsic physico-chemical and optical properties making it first-choice material: low resistivity, high reflectance in the infrared spectral range, good corrosion resistance, good chemical inertness, good thermal stability, and high hardness [4][5][6]. Generally, TiN thin layer is obtained using a wide range of deposition processes requiring vacuum technology, such as reactive magneton sputtering [1,[7][8][9][10], molecular-beam epitaxy [11,12], chemical vapor deposition (CVD) [13][14][15], atomic layer deposition (ALD) [16][17][18][19] or pulsed laser deposition (PLD) [20][21][22], under a nitrogen or ammonia atmosphere. Unfortunately, due to its good hardness and chemical resistance, TiN is not adapted for being micro or nanostructured using standard etching process (Reactive Ion Etching for example).…”
Section: Introductionmentioning
confidence: 99%
“…Indeed, TiN has intrinsic physico-chemical and optical properties making it first-choice material: low resistivity, high reflectance in the infrared spectral range, good corrosion resistance, good chemical inertness, good thermal stability, and high hardness [4][5][6]. Generally, TiN thin layer is obtained using a wide range of deposition processes requiring vacuum technology, such as reactive magneton sputtering [1,[7][8][9][10], molecular-beam epitaxy [11,12], chemical vapor deposition (CVD) [13][14][15], atomic layer deposition (ALD) [16][17][18][19] or pulsed laser deposition (PLD) [20][21][22], under a nitrogen or ammonia atmosphere. Unfortunately, due to its good hardness and chemical resistance, TiN is not adapted for being micro or nanostructured using standard etching process (Reactive Ion Etching for example).…”
Section: Introductionmentioning
confidence: 99%
“…This excessive heating limits the use of CVD for some technical applications where substrate material cannot tolerate high temperatures. Moreover, it is known that some titanium-based precursors and their by-products are highly corrosive, which lead to various material handling and storage problems [9]. In recent years for the preparation of TiO 2 thin films, PVD methods gained enormous interest since they are not limited to the deposition only at thermodynamically equilibrium and they run at much lower costs in comparison to CVD processes [10].…”
Section: Introductionmentioning
confidence: 99%
“…[5,43] Thus, stabilizing the nanostructures without altering their optical/thermal functionality is in high demand. Although there have been detailed studies on the growth of epitaxial TiN, [33,44,45] information on structural properties and thermal stability at extreme temperatures (>1200 °C) is not readily available.…”
Section: Introductionmentioning
confidence: 99%