Handbook of Thin Film Deposition Processes and Techniques 2001
DOI: 10.1016/b978-081551442-8.50008-0
|View full text |Cite
|
Sign up to set email alerts
|

Chemical Vapor Deposition of Silicon Dioxide Films

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1
1

Citation Types

0
17
0

Year Published

2017
2017
2021
2021

Publication Types

Select...
4
2
2
1

Relationship

0
9

Authors

Journals

citations
Cited by 20 publications
(17 citation statements)
references
References 10 publications
0
17
0
Order By: Relevance
“…The high conductivity of metals allows for ultrathin metal cores (down to <1 m), with an adjustable insulating layer from <1 to >50 m thick. In typical preparations, the bare metal wire was wrapped around an open 10-cm spindle, followed by depositing a glass insulating layer ~1 m thick using silane decomposition in a Thermco lowtemperature oxide furnace at 300°C, providing a robust inorganic insulating layer (26).…”
Section: Microwire Bundlesmentioning
confidence: 99%
“…The high conductivity of metals allows for ultrathin metal cores (down to <1 m), with an adjustable insulating layer from <1 to >50 m thick. In typical preparations, the bare metal wire was wrapped around an open 10-cm spindle, followed by depositing a glass insulating layer ~1 m thick using silane decomposition in a Thermco lowtemperature oxide furnace at 300°C, providing a robust inorganic insulating layer (26).…”
Section: Microwire Bundlesmentioning
confidence: 99%
“…Sharpening the probe tip geometry is a common strategy for reducing tissue compression in penetrating microelectrodes 26,27 which may result in less tissue damage, such as for Michigan-style probe arrays 28,29 . To elucidate the effects of probe shape in the 10-100 µm range, penetration of angle-polished (24º) and electrosharpened probes (tip radius ~10 nm, (ex vivo shown in Figure S3).…”
Section: Tip Geometry Dependencementioning
confidence: 99%
“…Despite their high potential, the applicability of the existing technologies is limited due to the high processing cost of CVD processes, which require a reactor and vacuum equipment [20], or the inherently porous nature of sol-gel SiO 2 , which requires high temperature sintering (> 600 ºC) to reach fully densified ceramic films [21]. As a viable alternative to the traditional processes, the deposition of SiO 2 -like films from hydrogen silsesquioxane (HSQ) precursor has been demonstrated [22][23][24].…”
Section: Introductionmentioning
confidence: 99%