Chemical Vapor Deposition of Metallic Films Using Plasma Electrons as Reducing Agents

Nadhom, Hama; Lundin, Daniel; Rouf, Polla; Pedersen, Henrik

doi:10.26434/chemrxiv.10026701.v2

Cited by 4 publications

(5 citation statements)

References 8 publications

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“…Such configuration recently allowed us to achieve ASD by utilizing the resistivity of the substrate. 21 In this work, we present an inexpensive and straightforward approach to achieve ASD of iron films using the polymers polydimethylsiloxane (PDMS), polymethylmethacrylate (PMMA), and polystyrene (PS) to mask areas on the substrate where film growth is undesired. The mentioned polymers are very common, produced in large volumes and are available at low cost.…”

Section: Introductionmentioning

confidence: 99%

Area Selective Deposition of Iron Films Using Temperature Sensitive Masking Materials and Plasma Electrons as Reducing Agents

Nadhom¹,

Yuan²,

Rouf³

et al. 2021

Preprint

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potential of area selective deposition (ASD) with a newly developed chemical vapor deposition method, which utilize plasma electrons as reducing agents for deposition of metal-containing films, is demonstrated using temperature sensitive polymer-based masking materials. The masking materials tested were polydimethylsiloxane (PDMS), polymethylmethacrylate (PMMA), polystyrene (PS), parafilm, Kapton tape, Scotch tape, and office paper. The masking materials were all shown to prevent film growth on the masked area of the substrate without being affected by the film deposition process. X-ray photoelectron spectroscopy analysis confirms that the films deposited consist mainly of iron, whereas no film material is found on the masked areas after mask removal. SEM analysis of films deposited with non-adhesive masking materials show that film growth extended for a small distance underneath the masking material, indicating that the CVD process with plasma electrons as reducing agents is not a line-of-sight deposition technique. The reported methodology introduces an inexpensive and straightforward approach for ASD that opens for exciting new possibilities for robust and less complex area selective metal-on-metal deposition.

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Section: Introductionmentioning

confidence: 99%

Area Selective Deposition of Iron Films Using Temperature Sensitive Masking Materials and Plasma Electrons as Reducing Agents

Nadhom¹,

Yuan²,

Rouf³

et al. 2021

Preprint

Self Cite

View full text Add to dashboard Cite

show abstract

“…We recently reported a new CVD method for deposition of metallic films where the free electrons in a plasma are used as reducing agents. 10 Because the method draws an electron current from the plasma to an electrically biased substrate, a conducting surface is needed to close the electric circuit allowing the electron current to flow from the plasma discharge to the bias power supply without any charge buildup. Therefore, metallic films could be deposited on electrically conducting silver substrates, while the deposition process was hampered on poorly conductive silicon and inactive on insulating silicon dioxide substrates.…”

mentioning

confidence: 99%

“…The deposition system setup and the experimental procedures of our new CVD method are described elsewhere. 10 Briefly, the depositions were performed in a vacuum chamber equipped with a hollow cathode plasma source located in the top lid of the vacuum chamber. Argon was used as working gas at a flow rate of 70 sccm through the titanium hollow cathode.…”

mentioning

confidence: 99%

Area Selective Deposition of Metals from the Electrical Resistivity of the Substrate

Nadhom

Boyd

Rouf

et al. 2021

J. Phys. Chem. Lett.

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Area selective deposition (ASD) of films only on desired areas of the substrate opens for less complex fabrication of nanoscaled electronics. We show that a newly developed CVD method, where plasma electrons are used as the reducing agent in deposition of metallic thin films, is inherently area selective from the electrical resistivity of the substrate surface. When depositing iron with the new CVD method, no film is deposited on high-resistivity SiO 2 surfaces whereas several hundred nanometers thick iron films are deposited on areas with low resistivity, obtained by adding a thin layer of silver on the SiO 2 surface. On the basis of such a scheme, we show how to use the electric resistivity of the substrate surface as an extension of the ASD toolbox for metal-on-metal deposition.

show abstract

“…The deposition system setup and the experimental procedures of our new CVD method are described elsewhere. 10 Briefly, the depositions were carried out in a vacuum chamber equipped with a hollow cathode plasma source located in the top lid of the vacuum chamber. Argon was used as working gas at a flow rate of 70 sccm through the titanium hollow cathode.…”

mentioning

confidence: 99%

Area Selective Deposition of Metals from the Electrical Resistivity of the Substrate

Nadhom¹,

Boyd²,

Rouf³

et al. 2021

Preprint

Self Cite

View full text Add to dashboard Cite

Area selective deposition (ASD) of films only on desired areas of the substrate opens for less complex fabrication of nanoscaled electronics. We show that a newly developed CVD method, where plasma electrons are used as the reducing agent in deposition of metallic thin films, is inherently area selective from the electrical resistivity of the substrate surface. When depositing iron with the new CVD method, no film is deposited on high-resistivity SiO2 surfaces whereas several hundred nm thick iron films are deposited on areas with low resistivity, obtained by adding a thin layer of silver on the SiO2 surface. Based on such a scheme, we show how to use the electric resistivity of the substrate surface as an extension of the ASD toolbox for metal-on-metal deposition.

show abstract

Chemical Vapor Deposition of Metallic Films Using Plasma Electrons as Reducing Agents

Cited by 4 publications

References 8 publications

Area Selective Deposition of Iron Films Using Temperature Sensitive Masking Materials and Plasma Electrons as Reducing Agents

Area Selective Deposition of Iron Films Using Temperature Sensitive Masking Materials and Plasma Electrons as Reducing Agents

Area Selective Deposition of Metals from the Electrical Resistivity of the Substrate

Area Selective Deposition of Metals from the Electrical Resistivity of the Substrate

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