2017
DOI: 10.1021/jacs.6b12156
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Chemical Vapor Deposition of Large-Size Monolayer MoSe2 Crystals on Molten Glass

Abstract: We report the fast growth of high-quality millimeter-size monolayer MoSe crystals on molten glass using an ambient pressure CVD system. We found that the isotropic surface of molten glass suppresses nucleation events and greatly improves the growth of large crystalline domains. Triangular monolayer MoSe crystals with sizes reaching ∼2.5 mm, and with a room-temperature carrier mobility up to ∼95 cm/(V·s), can be synthesized in 5 min. The method can also be used to synthesize millimeter-size monolayer MoS crysta… Show more

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Cited by 285 publications
(284 citation statements)
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References 23 publications
(45 reference statements)
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“…Considering the importance of sample uniformity to practical applications, we have made more attempts for improving the growth, for example, suppression of the amount of source (Figure S2, Supporting Information) and introduction of inner tube (Figure S3c, Supporting Information), which give a limited improvement on result. To further improve the uniformity, we will try to employ space‐confined strategy for growth, which benefit to produce large‐area and high quality thin flakes with the unprecedented uniformity and controllability . It is easy to find that GaSe flakes are inclined to deposit on the surface of MoS 2 and only a few small irregular microstructures can be found on the bare SiO 2 /Si substrate, which suggests the precursor has a lower nucleation and migration energy barrier on MoS 2 than on SiO 2 /Si substrate (Figures S3 and S4, Supporting Information) .…”
Section: Resultsmentioning
confidence: 99%
“…Considering the importance of sample uniformity to practical applications, we have made more attempts for improving the growth, for example, suppression of the amount of source (Figure S2, Supporting Information) and introduction of inner tube (Figure S3c, Supporting Information), which give a limited improvement on result. To further improve the uniformity, we will try to employ space‐confined strategy for growth, which benefit to produce large‐area and high quality thin flakes with the unprecedented uniformity and controllability . It is easy to find that GaSe flakes are inclined to deposit on the surface of MoS 2 and only a few small irregular microstructures can be found on the bare SiO 2 /Si substrate, which suggests the precursor has a lower nucleation and migration energy barrier on MoS 2 than on SiO 2 /Si substrate (Figures S3 and S4, Supporting Information) .…”
Section: Resultsmentioning
confidence: 99%
“…Finally, we address experimental feasibility. It is possible to produce high-quality monolayer MoX 2 crystals with low impurity densities, and sizes in the tens of microns or even millimeters [62][63][64][65]. Such large samples may guarantee that the topological Andreev edge states at opposing edges are well separated.…”
Section: Summary and Discussionmentioning
confidence: 99%
“…Chen et al. achieved millimeter‐size monolayer MoSe 2 and MoS 2 crystals with molten glass as growth substrates . The isotropic surface of molten glass suppressed nucleation events and greatly improved the growth of large crystalline domains.…”
Section: Preparation Methodsmentioning
confidence: 99%
“…[43] NH 4 Cl promoter can react with Ti powders and switch the solid-phases ulfurization reaction into aC VD process, thus enablingt he controllability.C hen et al achieved millimeter-size monolayer MoSe 2 and MoS 2 crystals with molteng lass as growth substrates. [44] The isotropic surface of molteng lass suppressed nucleation events and greatlyi mproved the growth of large crystalline domains. When the precursor is am etal-organic compound, the CVD process can be defined as am etalorganic CVD method.…”
Section: Cvd Methodsmentioning
confidence: 99%