Chemical vapor deposition of copper thin films for multi-level interconnections

Low electrical resistivity in thin and ultrathin copper layers grown by high power impulse magnetron sputtering

“…9,11,12 It is associated with free-electron scattering at external surfaces and higher grain density resulting in internal free-electron scattering at grain boundaries, as well as other minor factors as inhomogeneous film growth, decreased island growth, surface roughness, impurities, and poor film crystallinity. 4,[12][13][14][15][16] Indeed, previous works have shown that the resistivity of copper thin films increases from bulk value to several lX cm when the layers are in the a) Electronic mail: felipe.cemin@u-psud.fr nanoscale range. 3,5,10,[17][18][19] Therefore, the understanding and control of this size-dependent phenomenon is a major concern and a key issue to the entire microelectronics industry, since copper is expected to continue dominating the interconnect technology.…”

“…9,11 Most copper thin films are grown by physical vapor deposition (PVD) processes, in particular, by conventional direct current magnetron sputtering (DCMS), [2][3][4]17,[20][21][22] and by metal-organic chemical vapor deposition (MOCVD). 15,[23][24][25] Compared to the conventional PVD processes, the copper films deposited by CVD exhibit a better step coverage and higher deposition rates. However, MOCVD requires a complicated processing system with the use of metal organic compounds, higher deposition temperatures ($180-400 C), and the need of a postannealing process to improve the thin film smoothness, crystallinity, and electromigration.…”

Enhancement of terahertz radiation in a Smith–Purcell backward-wave oscillator by an inverse wet-etched grating

“…ing [19]. Additionally, the copper-deposited wet-etched grating can be mounted on a heat sink to dissipate the heat.…”

Effect of liquid additives in supercritical fluid deposition of copper for enhancing deposition chemistry

“…In SCFD, the use of scCO 2 as a solvent overcomes several limitations in vacuum-based processes. For example, solubility of precursors due to the liquid-like property of scCO 2 increases the variety of applicable precursors [11], while there are only few precursors for Cu-CVD due to low volatility of Cu compounds [12][13][14][15][16][17][18][19][20][21][22]. The use of scCO 2 also has numerous advantages inherent in the physical properties of scCO 2 intermediate between liquid and gas.…”