Chemical Vapor Deposition Method Grown All-Inorganic Perovskite Microcrystals for Self-Powered Photodetectors

Tian, Cancan; Wang, Fei; Wang, Yunpeng; Yang, Zhe; Chen, Xuejiao; Mei, Jingjing; Liu, Hongzhen; Zhao, Dongxu

doi:10.1021/acsami.9b03551

Cited by 72 publications

(43 citation statements)

References 50 publications

(97 reference statements)

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“…Sensors 2020, 20, x FOR PEER REVIEW 2 of 10 for a wide range of applications in the field of optoelectronics. Thus far, various types of light sensors have been studied and consequently applied; these include various photodetectors and Schottky barrier diodes [13][14][15][16][17][18][19][20][21][22][23][24][25]. Metal-semiconductor-metal (MSM) structured light sensors or photodetectors have the advantages of a straightforward manufacturing process, high sensitivity, and high response speed as compared with sensors possessing other structures.…”

Section: Methodsmentioning

confidence: 99%

Study of Metal–Semiconductor–Metal CH3NH3PbBr3 Perovskite Photodetectors Prepared by Inverse Temperature Crystallization Method

Chen

Lee

et al. 2020

Sensors

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Numerous studies have addressed the use of perovskite materials for fabricating a wide range of optoelectronic devices. This study employs the deposition of an electron transport layer of C60 and an Ag electrode on CH3NH3PbBr3 perovskite crystals to complete a photodetector structure, which exhibits a metal–semiconductor–metal (MSM) type structure. First, CH3NH3PbBr3 perovskite crystals were grown by inverse temperature crystallization (ITC) in a pre-heated circulator oven. This oven was able to supply uniform heat for facilitating the growth of high-quality and large-area crystals. Second, the different growth temperatures for CH3NH3PbBr3 perovskite crystals were investigated. The electrical, optical, and morphological characteristics of the perovskite crystals were analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM), ultraviolet-visible spectroscopy, and photoluminescence (PL). Finally, the CH3NH3PbBr3 perovskite crystals were observed to form a contact with the Ag/C60 as the photodetector, which revealed a responsivity of 24.5 A/W.

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Section: Methodsmentioning

confidence: 99%

Study of Metal–Semiconductor–Metal CH3NH3PbBr3 Perovskite Photodetectors Prepared by Inverse Temperature Crystallization Method

Chen

Lee

et al. 2020

Sensors

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“…The PCE of the device was 12.4% based on the mesoscopic structure with no hysteresis. Since then, various PMs such as CH 3 NH 3 PbI 3 , (CH 3 NH3) 3 Bi 2 I 9 , and CsPbBr 3 have been successfully prepared in low-pressure or ultra-low-pressure CVD systems [58,59,60,61,62,63,64,65,66,67]. The published works in recent years using the LPCVD method to fabricated perovskite materials are summarized and listed in Table 2.…”

Section: Synthesis and Application Of Ppms Using The Cvd Methodsmentioning

confidence: 99%

A Review of Perovskite Photovoltaic Materials’ Synthesis and Applications via Chemical Vapor Deposition Method

et al. 2019

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Perovskite photovoltaic materials (PPMs) have emerged as one of superstar object for applications in photovoltaics due to their excellent properties—such as band-gap tunability, high carrier mobility, high optical gain, astrong nonlinear response—as well as simplicity of their integration with other types of optical and electronic structures. Meanwhile, PPMS and their constructed devices still present many challenges, such as stability, repeatability, and large area fabrication methods and so on. The key issue is: how can PPMs be prepared using an effective way which most of the readers care about. Chemical vapor deposition (CVD) technology with high efficiency, controllability, and repeatability has been regarded as a cost-effective road for fabricating high quality perovskites. This paper provides an overview of the recent progress in the synthesis and application of various PPMs via the CVD method. We mainly summarize the influence of different CVD technologies and important experimental parameters (temperature, pressure, growth environment, etc.) on the stabilization, structural design, and performance optimization of PPMS and devices. Furthermore, current challenges in the synthesis and application of PPMS using the CVD method are highlighted with suggested areas for future research.

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“…All the results are at the upper level in the state-of-the-art CsPbBr 3 perovskite PDs, as shown in Table 1. [28][29][30][31][32][33][34][35][36][37][38] Benefiting from the high sensitivity of NCT PD, an imaging system has been successfully demonstrated with high resolution (≤25 µm) and high SNR, even under weak light condition (4 nW cm −2 ).…”

Section: Linear Dynamic Range (Ldr) and Weak-light Detection Limit Ofmentioning

confidence: 99%

All‐Inorganic Perovskite Photodetectors with Ultrabroad Linear Dynamic Range for Weak‐Light Imaging Applications

Cen

et al. 2020

Advanced Optical Materials

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introduced some new problems, such as limited application scenarios or reduced time resolution. As an important component of imaging systems, improving the performance of photodetectors (PDs) becomes a more effective way to overcome the above issues. [6-8] The weak-light detectable limit (WDL) and linear dynamic range (LDR) are two critical parameters for PDs to determine the image quality under weak-light conditions. As a main stream for image sensors, the silicon-based PDs have been widely used in digital cameras and smartphones. These PDs possess low-noise, broadband and high-detectivity properties. However, silicon has a narrow band gap of 1.1 eV leading to unwanted near-infrared response, [9] which increases the optical noise and reduces image quality. Though other semiconductors like NiO and ZnO with wider band gaps exhibit equally specific detectivity, [10,11] the WDL and LDR are less than satisfactory, along with large dark current density. Therefore, it is highly desirable to find novel high-performance PDs with low WDL and broad LDR, as well as low-cost manufacturing procedure and assembling techniques. Recently, methylammonium metal halide perovskites have been intensively studied in the field of photodetection due to their extraordinary optoelectronic properties. [12-14] The main obstacle for the high-performance device fabrication is the instability issue. [15,16] Fortunately, inorganic metal halide perovskites, CsPbX 3 (X = Cl, Br, I) exhibiting both high stability and tunable band gap, are considered to be one kind of promising materials to address the instability issues. [17] Recently, perovskites have been widely applied in the field of photoelectric imaging. [18-20] Although great improvements have been made in previous imaging applications, the image contrast and SNR of as reported inorganic perovskite PDs-based imaging are still not satisfactory, and less attention has been paid to weak-light imaging applications. Extensive attempts have been made to improve the photodetection performance of PDs. An effective strategy is introducing interfacial passivation layers by atomic layer deposition (ALD) technique. [21-24] ALD can synthesize thickness-controlled, dense, and uniform thin films at low temperature, [25] which meets the critical demands for the heterojunctions fabrication. Rehman et al. reported that J sc of Graphene/Si solar cell rises from 27.8 to 33.4 mA cm −2

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Chemical Vapor Deposition Method Grown All-Inorganic Perovskite Microcrystals for Self-Powered Photodetectors

Cited by 72 publications

References 50 publications

Study of Metal–Semiconductor–Metal CH3NH3PbBr3 Perovskite Photodetectors Prepared by Inverse Temperature Crystallization Method

Study of Metal–Semiconductor–Metal CH3NH3PbBr3 Perovskite Photodetectors Prepared by Inverse Temperature Crystallization Method

A Review of Perovskite Photovoltaic Materials’ Synthesis and Applications via Chemical Vapor Deposition Method

All‐Inorganic Perovskite Photodetectors with Ultrabroad Linear Dynamic Range for Weak‐Light Imaging Applications

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