Chemical vapor deposition-formed p-type ZnO thin films

Abstract

We have fabricated nitrogen-doped zinc oxide (ZnO) films that demonstrate p-type behavior by using metalorganic chemical vapor deposition. In our experiment, diethylzinc is used as a Zn precursor, and NO gas is used to supply both O and N to form a N-doped ZnO (ZnO:N) film. With these precursors, we have routinely reached an N concentration in the ZnO films of about 1–3 at. %. When the N concentration level is higher than 2 at. %, the films demonstrate p-type characteristics. The carrier concentration of the films varies from 1.0×1015 to 1.0×1018 cm−3, and mobilities are mainly in the 10−1 cm2 V−1 s−1 range. The lowest film resistivity achieved is ∼20 Ω cm.

ZnO light-emitting diode grown by plasma-assisted metal organic chemical vapor deposition

“…[2][3][4] Traditionally, N 2 has been used as the doping source, although the equilibrium solubility of N is expected to be low. 2 In order to increase the N solubility, various exotic approaches have been applied such as using NO, 5,6 N 2 O, 6 their combination, 7 or NH 3 , 8 as the source. It has been suggested 9 that the use of NO may reduce the concentration of undesirable substitutional N 2 molecular donors.…”

Effect of substrate temperature on the photoelectrochemical responses of Ga and N co-doped ZnO films

“…As the substrate temperature is increased to 300 and 500°C, the peak intensities are decreased, indicating the incorporation of more N in the films. It is known from recent reports that incorporated N atoms can deteriorate the crystal structure and modify the growth mode [11,27,28]. The crystallite size of the ZnO film, estimated according to the Scherrer equation, is about 21 nm.…”

Electron and hole traps in N-doped ZnO grown on p-type Si by metalorganic chemical vapor deposition

“…For example, ZnO:N films grown by metalorganic chemical vapor deposition ͑MOCVD͒ are p type only if deposited at ϳ400°C, and higher or lower growth temperatures lead to n-type material. 4 Various growth conditions also can influence the presence of midgap impurities and point defects and such deep centers can produce undesired trapping and carrier recombination. In past years, deep level transient spectroscopy ͑DLTS͒ has been used to study traps ͑mainly electron traps͒ in n-type bulk ZnO grown by the hydrothermal, 5 vapor-phase, 6 and pressurized melt growth 7 methods.…”