Chemical Vapor Deposition Enhanced by Atmospheric Pressure Non‐thermal Non‐equilibrium Plasmas

Alexandrov, Sergei; Hitchman, Michael L.

doi:10.1002/cvde.200500026

Cited by 95 publications

(55 citation statements)

References 51 publications

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“…[1,2] Such processes do not require expensive vacuum equipment, and they can deposit high quality films at high growth rates for electrical, optical, and other applications. The various types of atmospheric pressure (AP) PECVD that have been developed are discussed in the overview for this issue of CVD, [3] and have also been reviewed elsewhere, e.g. [4,5] These reviews consider various sources of plasma that provide either thermal, near equilibrium plasmas, or non-thermal, non-equilibrium plasmas.…”

Section: Introductionmentioning

confidence: 99%

Remote AP‐PECVD of Silicon Dioxide Films from Hexamethyldisiloxane (HMDSO)

Alexandrov

McSporran

Hitchman

2005

Chemical Vapor Deposition

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In this paper we report on a study of an AP-PECVD process based on a simple, and very inexpensive, dielectric barrier discharge using a standard mains supply frequency. We have investigated the effect of a range of deposition parameters on the properties of silicon oxide layers grown from a HMDSO/O 2 /Ar system. It is shown that the flux of energetic species from the discharge generation is a critical parameter in determining the growth rate and characteristics of the deposited films. Growth rates up to 10 nm min ±1 can be achieved and layer properties, such as refractive index and breakdown voltage, are comparable with those obtained by more conventional CVD processes. General optimum conditions for high growth rates and good quality films can be inferred from the results.

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Section: Introductionmentioning

confidence: 99%

Remote AP‐PECVD of Silicon Dioxide Films from Hexamethyldisiloxane (HMDSO)

Alexandrov

McSporran

Hitchman

2005

Chemical Vapor Deposition

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“…Plasma assisted deposition and sputtering is known to be much more effective than conventional gas-phase chemistry, since it is free of the thermodynamic restrictions of the latter, and able to harness electrostatic fields to produce higher-energy particle impacts, combined with electron-moderated chemistry (e.g. see Stoffel et al (1996); Alexandrov & Hitchman (2005); Jones & Hitchman (2009)). In contrast to previous studies, this paper considers how plasma collective effects self-consistently energise the plasma ions such that they can participate in plasma deposition and plasma sputtering.…”

Section: Introductionmentioning

confidence: 99%

Dust cloud evolution in sub-stellar atmospheres via plasma deposition and plasma sputtering

Stark¹,

Diver

2018

A&A

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Context. In contemporary sub-stellar model atmospheres, dust growth occurs through neutral gas-phase surface chemistry. Recently, there has been a growing body of theoretical and observational evidence suggesting that ionisation processes can also occur. As a result, atmospheres are populated by regions composed of plasma, gas and dust, and the consequent influence of plasma processes on dust evolution is enhanced. Aims. This paper aims to introduce a new model of dust growth and destruction in sub-stellar atmospheres via plasma deposition and plasma sputtering. Methods. Using example sub-stellar atmospheres from Drift-Phoenix, we have compared plasma deposition and sputtering timescales to those from neutral gas-phase surface chemistry to ascertain their regimes of influence. We calculated the plasma sputtering yield and discuss the circumstances where plasma sputtering dominates over deposition. Results. Within the highest dust density cloud regions, plasma deposition and sputtering dominates over neutral gas-phase surface chemistry if the degree of ionisation is 10 −4 . Loosely bound grains with surface binding energies of the order of 0.1 − 1 eV are susceptible to destruction through plasma sputtering for feasible degrees of ionisation and electron temperatures; whereas, strong crystalline grains with binding energies of the order 10 eV are resistant to sputtering. Conclusions. The mathematical framework outlined sets the foundation for the inclusion of plasma deposition and plasma sputtering in global dust cloud formation models of sub-stellar atmospheres.

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“…Various types of discharges [1][2][3][4] have been widely used for the synthesis of different nanomaterials, such as thin films, 5-8 nanoparticles, 9-11 nanotubes [12][13][14] and nanocomposites. 15,16 The applications of atmospheric pressure (AP) discharges conducted at radio frequency (RF) are of high interest due to several advantages, for instance, (i) the convenience of use and the simplicity of hardware design; (ii) high concentrations of precursors in the vapor phase and, as consequence, high product yield; (iii) low thermal input to the substrate due to intrinsic low-temperature nature.…”

Section: Introductionmentioning

confidence: 99%

Spatial distribution of the electrical potential and ion concentration in the downstream area of atmospheric pressure remote plasma

et al. 2014

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This paper presents the results from an experimental study of the ion flux characteristics behind the remote plasma zone in a vertical tube reaction chamber for atmospheric pressure plasma enhanced chemical vapor deposition. Capacitively coupled radio frequency plasma was generated in pure He and gas mixtures: He–Ar, He–O2, He–TEOS. We previously used the reaction system He–TEOS for the synthesis of self-assembled structures of silicon dioxide nanoparticles. It is likely that the electrical parameters of the area, where nanoparticles have been transported from the synthesis zone to the substrate, play a significant role in the self-organization processes both in the vapor phase and on the substrate surface. The results from the spatial distribution of the electrical potential and ion concentration in the discharge downstream area measured by means of the external probe of original design and the special data processing method are demonstrated in this work. Positive and negatives ions with maximum concentrations of 106–107 cm−3 have been found at 10–80 mm distance behind the plasma zone. On the basis of the revealed distributions for different gas mixtures, the physical model of the observed phenomena is proposed. The model illustrates the capability of the virtual ion emitter formation behind the discharge gap and the presence of an extremum of the electrical potential at the distance of approximately 10−2–10−1 mm from the grounded electrode.

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Chemical Vapor Deposition Enhanced by Atmospheric Pressure Non‐thermal Non‐equilibrium Plasmas

Abstract: This review gives an overview of the characteristics of various non-thermal, non-equilibrium plasmas and discusses applications of AP-PECVD with dielectric barrier discharges, corona discharges, RF discharges, and microwave discharges.

Cited by 95 publications

References 51 publications

Remote AP‐PECVD of Silicon Dioxide Films from Hexamethyldisiloxane (HMDSO)

Remote AP‐PECVD of Silicon Dioxide Films from Hexamethyldisiloxane (HMDSO)

Dust cloud evolution in sub-stellar atmospheres via plasma deposition and plasma sputtering

Spatial distribution of the electrical potential and ion concentration in the downstream area of atmospheric pressure remote plasma

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