Chemical tuning of photo- and persistent luminescence of Cr3+-activated β-Ga2O3 by alloying with Al2O3 and In2O3

Stasiv, Vasyl; Zhydachevskyy, Yaroslav; Stadnik, Vitalii; Hreb, Vasyl; Mykhaylyk, Vitaliy; Vasylechko, Leonid; Luchechko, Andriy; Wojciechowski, Tomasz; Sybilski, Piotr; Suchocki, Andrzej

doi:10.1016/j.jallcom.2024.173827

Cited by 5 publications

(4 citation statements)

References 63 publications

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“…Later on, it was validated by perturbed angular correlation measurements [ 26 ] and confirmed by an analysis of XRD data [ 27 , 28 ]. Finally, the exclusive preference of In 3+ ions for octahedral sites was recently proved by comprehensive structural investigations of (Ga 1−x In x ) 2 O 3 powders doped with Cr 3+ [ 29 ] and co-doped with Cr 3+ /Ca 2+ ions [ 17 ].…”

Section: Resultsmentioning

confidence: 99%

“…As it was shown above, β-(Ga 0.8 In 0.2 ) 2 O 3 has a monoclinic structure similar to β-Ga 2 O 3 , where 40% of gallium atoms in octahedral coordination are replaced by indium atoms (see also Refs. [ 17 , 25 ]). Therefore, similar energy dependencies for forming intrinsic defects should be observed in both β-Ga 2 O 3 and β-(Ga 0.8 In 0.2 ) 2 O 3 .…”

Section: Discussionmentioning

confidence: 99%

“…Solid solutions of monoclinic gallium oxide with aluminum or indium oxide is a well-known approach for tuning the physical properties of β-Ga 2 O 3 over a wide range [ 13 , 14 , 15 , 16 ]. This tuning is achieved primarily by modifying the crystal structure and electronic band structure of the material (see [ 11 , 13 , 17 ] and references therein). Several recent studies confirm the high effectiveness of this approach for the enhancement of functional properties of β-Ga 2 O 3 -based semiconductor devices [ 18 , 19 , 20 , 21 ].…”

Section: Introductionmentioning

confidence: 99%

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Crystal Structure, Luminescence and Electrical Conductivity of Pure and Mg2+-Doped β-Ga2O3-In2O3 Solid Solutions Synthesized in Oxygen or Argon Atmospheres

Luchechko,

Vasyltsiv,

Kushlyk

et al. 2024

Materials

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Undoped and Mg2+-doped β-Ga2O3-20% In2O3 solid solution microcrystalline samples were synthesized using the high-temperature solid-state chemical reaction method to investigate the influence of native defects on structural, luminescent, and electrical properties. The synthesis process involved varying the oxygen partial pressure by synthesizing samples in either an oxygen or argon atmosphere. X-ray diffraction (XRD) analysis confirmed the monoclinic structure of the samples with the lattice parameters and unit cell volume fitting well to the general trends of the (Ga1−xInx)2O3 solid solution series. Broad emission spectra ranging from 1.5 to 3.5 eV were registered for all samples. Luminescence spectra showed violet, blue, and green emission elementary bands. The luminescence intensity was found to vary depending on the synthesis atmosphere. An argon synthesis atmosphere leads to increasing violet luminescence and decreasing green luminescence. Intense bands at about 4.5 and 5.0 eV and a low-intensity band at 3.3 eV are presented in the excitation spectra. The electrical conductivity of the samples was also determined depending on the synthesis atmosphere. The high-resistance samples obtained in an oxygen atmosphere exhibited activation energy of around 0.98 eV. Samples synthesized in an argon atmosphere demonstrated several orders of magnitude higher conductivity with an activation energy of 0.15 eV. The results suggest that the synthesis atmosphere is crucial in determining the luminescent and electrical properties of undoped β-Ga2O3-In2O3 solid solution samples, offering the potential for various optoelectronic applications.

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Section: Resultsmentioning

confidence: 99%

Section: Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Crystal Structure, Luminescence and Electrical Conductivity of Pure and Mg2+-Doped β-Ga2O3-In2O3 Solid Solutions Synthesized in Oxygen or Argon Atmospheres

Luchechko,

Vasyltsiv,

Kushlyk

et al. 2024

Materials

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“…Still, this process can only occur if the Cr 3+ ion has not captured the electron from the VB. All this causes the CT to become a metastable state, and persistent luminescence and photocurrent are observed in the tested systems. It should be noted that the electron current observed in undoped materials is strongly quenched by the CT states (which are deep electron traps).…”

Section: Resultsmentioning

confidence: 99%

Photoelectric Studies as the Key to Understanding the Nonradiative Processes in Chromium Activated NIR Materials

Majewska,

Fang,

Mahlik

2024

J. Am. Chem. Soc.

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In this study, we synthesized a series of Ga 1.98−x In x O 3 :0.02Cr 3+ materials with varying x values from 0.0 to 1.0, focusing on their broadband near-infrared emission and photoelectric properties. Interestingly, photocurrent excitation spectra exhibited behavior consistent with the absorption spectra, indicating the promotion of carriers into the band structure by the 4 T 1 , and 4 T 2 states of Cr 3+ ions. This association suggests that photocurrent in this material is influenced not only by valence to conduction band transitions but also by transitions involving Cr 3+ dopants. Our investigation of luminescence quenching mechanisms revealed that nonradiative processes were not directly linked to thermally induced relaxation from the excited state 4 T 2 to the ground state 4 A 2 , as usually suggested in the literature for this type of material. Instead, we linked it to the thermal ionization of Cr 3+ ions. Unexpectedly, this process is unrelated to the transfer of electrons from Cr 3+ impurities to the conduction band but is associated with the formation of holes in the valence band. This study provided novel evidence of luminescence quenching via the hole-type thermal quenching process in Cr 3+ -doped oxides, suggesting potential applicability to other transition metal ions and host materials. Finally, we demonstrated the dual-purpose nature of Ga 1.98−x In x O 3 :0.02Cr 3+ as a practical emitter for NIR-pc-LEDs and effective photocurrent for UV detectors. This versatility underscores these materials' practicality and broad application potential in optoelectronic devices designed for near-infrared and ultraviolet applications.

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A review on defect engineered NIR persistent luminescence through transition metal ion (Cr, Mn, Fe and Ni) doping: Wider perspective covering synthesis, characterization, fundamentals and applications

Parayil,

Gupta,

Mohapatra

2025

Coordination Chemistry Reviews

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Chemical tuning of photo- and persistent luminescence of Cr3+-activated β-Ga2O3 by alloying with Al2O3 and In2O3

Cited by 5 publications

References 63 publications

Crystal Structure, Luminescence and Electrical Conductivity of Pure and Mg2+-Doped β-Ga2O3-In2O3 Solid Solutions Synthesized in Oxygen or Argon Atmospheres

Crystal Structure, Luminescence and Electrical Conductivity of Pure and Mg2+-Doped β-Ga2O3-In2O3 Solid Solutions Synthesized in Oxygen or Argon Atmospheres

Photoelectric Studies as the Key to Understanding the Nonradiative Processes in Chromium Activated NIR Materials

A review on defect engineered NIR persistent luminescence through transition metal ion (Cr, Mn, Fe and Ni) doping: Wider perspective covering synthesis, characterization, fundamentals and applications

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