“…Bi 2 Se3 Thin films have been prepared using various techniques such electro deposition [12] and Successive Ionic Layer Absorption and Reaction (SILAR) 13] methods] .The structure of Bi 2 Se 3 thin films were studied [14][15][16][17][18][19][20], It was found that, these films had polycrystalline structure with rhombohedral structure of Bi 2 Se 3 [17][18], space group (R¯3m) (166) [20]. Optical properties of Bi2Se3 thin films were studied [21][22][23][24][25][26][27], It was found that, the energy gap was 1.51 [21], with range 1.4 -2.25 eV [22], 1.10 eV and decrease with annealing [23],1.25 eV decrease with substrate temperature [24], 1.22 eV decreased wit temperature [25]. the transmitted values increased with annealing [26], The Bi2Se3 thin films had a direct transitions [27].…”