Chemical structure and mechanical properties of Si-containing a-C:H and a-C thin films and their Cr- and W-containing derivatives

Bertóti, I.; Tóth, A.; Mohai, M.; Szépvölgyi, János

doi:10.1016/j.surfcoat.2011.05.041

Cited by 36 publications

(18 citation statements)

References 69 publications

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“…Fig. 7) that the matrix is rich in Si, which promote the formation of sp 3 C bonds [2,35] . The seen segregation of Si can be explained by the very low solubility of Si in transition metal carbides [33] , which makes Si atoms become expelled during the formation of MeC grains.…”

Section: Resultsmentioning

confidence: 99%

“…At higher Si content the Me-Si-C can turn amorphous. An amorphous structure has been reported for several Me (e.g., in the Ti [17] , W [2,18] , Zr [3,13,19] , Nb [10] , Cr [2] , and Mo [3] ) systems. Depending on the choice of transition metal and the deposition conditions, the amount of Si required for the formation of an amorphous structure varies.…”

Section: Introductionmentioning

confidence: 98%

“…Ternary thin films composed of an early transition metal, silicon, and carbon (Me-Si-C) are used in applications such as protective coatings [1][2][3] , electrical contacts [4] , printing heads [5] , and solar cells [6] , due to their tribological [7,8] and electrical [9] properties. The thin film properties can be tailored by choice of transition metal and changing the structure through the composition.…”

Section: Introductionmentioning

confidence: 99%

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Model for electron-beam-induced crystallization of amorphous Me–Si–C (Me = Nb or Zr) thin films

et al. 2014

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 98%

Section: Introductionmentioning

confidence: 99%

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Model for electron-beam-induced crystallization of amorphous Me–Si–C (Me = Nb or Zr) thin films

et al. 2014

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“…The glow discharge generated in low pressure atmospheres, excited by radio-frequency (usually 13.56 MHz), have been widely used in different processes of scientific and technological interest involving the synthesis of new materials and surface treatment [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15]. The reason why glow discharges have been widely employed in the technological process is due to the fact that they allow the synthesis of new materials with high quality, attractive prices, allowing the emergence of viable alternatives for making and/or synthesis of materials that already exist [1][2][3][4][5].…”

Section: Introductionmentioning

confidence: 99%

Photothermal study of RF-plasma polymerized hexamethyldisilazane thin films

Jiménez-Pérez

Algatti

Martin

et al. 2015

Materials Science in Semiconductor Processing

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Keywords:Mirage effect Photo-thermal beam deflection Plasma-polymerized hexamethyldisilazane films Thermal diffusivity a b s t r a c t Plasma polymerization by RF excited low pressure plasmas is a powerful technique for synthesizing thin films for a wide range of applications such in microelectronics, biomaterials and aeronautical industries. Among these applications plasma polymerized hexamethyldisilazane (HMDSN here in) is a promising material due its biocompatibility, optical and electrical properties. In the present paper, we reported the thermal diffusivity measurements of plasma polymerized HMDSN thin films using the probe beam deflection technique (PBD). The samples are thermally thin and optically transparent, with thicknesses ranging from 170 to 600 nm, difficulting their thermal characterization by other photo-thermal techniques (photoacoustic and pyroelectric). PBD measurements were carried out with a diode (20 mW, λ ¼ 640 nm) and a HeNe (0.9 mW, λ ¼ 632 nm) laser, used as pump source and probe beam, respectively. The probe beam was focused close to the sample surface and its direction was perpendicular to the pump beam. The transverse PBD in skimming configuration is employed and the deflection signal is analyzed using the phase method for the determination of thermal diffusivity. The results show the decreasing of thermal diffusivity with the decreasing of film thickness. HMDSN film's thermal diffusivity values are reported in this paper for the first time being in the range of typical polymeric samples.

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“…The added element can be a weak carbide former such as Al, Fe or Cu, where the formation of metastable solid solutions of the MeC can be used to control the amount of carbon phase 7 . Another example of a widely used additive is Si, which reacts with C to form an amorphous SiC matrix and reduces the grain size of the MeC grains 8,9 or, at high Si contents, leads to an amorphous material [10][11][12][13][14][15] . Also the addition of Ge can yield a reduced grain size 16 or the formation of an amorphous material 17 .…”

Section: Introductionmentioning

confidence: 99%

Structure and electrical properties of Nb-Ge-C nanocomposite coatings

Tengstrand

Nedfors

Fast³

et al. 2014

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Nb-Ge-C nanocomposite thin films were deposited by dc magnetron sputtering using three elemental targets. The films consist of substoichiometric NbCx in a nanometer-thick matrix of amorphous C and Ge. Films with no Ge contain grains that are elongated in the growth direction with a (111) preferred crystallographic orientation. With the addition of ∼12 at. % Ge, the grains are more equiaxed and exhibit a more random orientation. At even higher Ge contents, the structure also becomes denser. The porous structure of the low Ge content films result in O uptake from the ambient. With higher C content in the films both the amount of amorphous C and C/Nb-ratio increases. The contact resistance was measured by four-point technique as a function of contact force between 0 and 10 N. The lowest contact resistance (1.7 mΩ) is obtained at 10 N. The resistivity varies between 470 and 1700 μΩ·cm depending on porosity and O content.

At the time for thesis presentation publication was in status: Manuscript

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Chemical structure and mechanical properties of Si-containing a-C:H and a-C thin films and their Cr- and W-containing derivatives

Cited by 36 publications

References 69 publications

Model for electron-beam-induced crystallization of amorphous Me–Si–C (Me = Nb or Zr) thin films

Model for electron-beam-induced crystallization of amorphous Me–Si–C (Me = Nb or Zr) thin films

Photothermal study of RF-plasma polymerized hexamethyldisilazane thin films

Structure and electrical properties of Nb-Ge-C nanocomposite coatings

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