Chemical spray pyrolysis of β-In2S3 thin films deposited at different temperatures

Photoelectrochemical properties of In2Se3 thin films: Effect of substrate temperature

“…The observed structural changes were attributed to the coalescence induced grain growth during the high temperature deposition process where smaller nuclei could easily rotate compared to the larger nuclei in order to minimize the interfacial energy [32]. After refinement, the cell constants were calculated to be a = b = 4.014 Å and c = 9.64Å; which are consistent with the reported data [33].…”

Effect of Complexing Agent on the Structural, Optical and Electrical Properties of Polycrystalline Indium Sulfide Thin Films Deposited by Chemical Bath Deposition

“…The estimated band gap values are listed in Table II. These results are in good agreement with previous works related to In 2 S 3 thin films [3,6,7]. The complex refractive indexes of the β-In 2 S 3 thin films are described as follows:…”

“…The β-In 2 S 3 exist in three crystallographic modifications α, β and γ. Cubic structure of β-In 2 S 3 is a stable phase at room temperature. Thin films of this material have been prepared by different methods such as spray ions layer gas reaction (ILGAR) [5], radio frequency (RF) magnetron sputtering [6], chemical spray pyrolysis [7], sol-gel [8] and chemical bath deposition (CBD) [9].…”

Effect of thermal annealing on physical properties of vacuum evaporated In2S3 buffer layer for eco-friendly photovoltaic applications

“…Hsiao et al [29] reported n-type In 2 S 3 nanoflake based thin films and observed a unique crosslinked network structure and optical band gap was found to be 2.5 eV. The tetragonal structure of β-In 2 S 3 is reported by Sall et al [30] and they concluded that the crystallinity was improved with substrate temperature. They also observed that the surface roughness decreased with temperature.…”