2012
DOI: 10.1146/annurev-chembioeng-062011-080958
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Chemical Processing of Materials on Silicon: More Functionality, Smaller Features, and Larger Wafers

Abstract: The invention of the transistor followed by more than 60 years of aggressive device scaling and process integration has enabled the global information web and subsequently transformed how people communicate and interact. The principles and practices built upon chemical processing of materials on silicon have been widely adapted and applied to other equally important areas, such as microfluidic systems for chemical and biological analysis and microscale energy storage solutions. The challenge of continuing thes… Show more

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Cited by 18 publications
(9 citation statements)
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“…Wet processing – including but not limited to etching, surface cleaning, surface chemical tailoring by liquid‐mediated priming or molecular adsorption, coating and printing of polymeric fluids, chemical mechanical polishing, and thermochemical reflow – is as integral to industrial process flows as necessary for exploratory forerunners in research laboratories. The active investigation and constant update of fluid‐based operations is driven by the introduction of new materials and material interfaces, the downscaling of critical feature sizes of nanoscopic devices and circuitry and the concurrent upscaling of the dia­meter of native substrates, and the tight integration of multiple heterogeneous functionalities within standalone units …”
Section: Introductionmentioning
confidence: 99%
“…Wet processing – including but not limited to etching, surface cleaning, surface chemical tailoring by liquid‐mediated priming or molecular adsorption, coating and printing of polymeric fluids, chemical mechanical polishing, and thermochemical reflow – is as integral to industrial process flows as necessary for exploratory forerunners in research laboratories. The active investigation and constant update of fluid‐based operations is driven by the introduction of new materials and material interfaces, the downscaling of critical feature sizes of nanoscopic devices and circuitry and the concurrent upscaling of the dia­meter of native substrates, and the tight integration of multiple heterogeneous functionalities within standalone units …”
Section: Introductionmentioning
confidence: 99%
“…The donor type localized charges acts as a +ve localize charge. The generation of localized charges due to hot carriers depends on the instantaneous bias conditions [42]- [44]. Hence due to -ve localize charge the potential reduces and for +ve localized charge the value of surface potential increases.…”
Section: Resultsmentioning
confidence: 99%
“…ALD process generally consists of sequential alternating pulses of gaseous chemical precursors that react with the substrate, these individual gas-surface reactions called 'half-reactions' and appropriately make up only part of the materials synthesis. During each half-reaction, the precursor is pulsed into a compartment under vacuum (< 1 Torr) over a selected extent of time to allow the precursor to fully react with the substrate surface through a self-limiting process that leaves no more than one monolayer at the surface [44,45]. Then, the chamber is purged with an inert carrier gas (typically N 2 or Ar) to remove any unreacted precursor or reaction by-products.…”
Section: Advance Manufacturing Methods For Energy Applicationsmentioning
confidence: 99%