Chemical potential of inhomogeneous single-layer graphene

Abstract

In this paper, we present measurements of the chemical potential of single-layer graphene as a function of carrier density and temperature, including near the Dirac point. Far from the charge neutrality point, the graphene is homogenous with a single carrier type. However, as the Dirac point is approached, puddles form, and electrons and holes coexist. Hall effect analyses based on two charge carriers are not adequate in this regime. Hence, a new methodology is introduced, and by using the chemical potential and the transport data self-consistently, we were able to extract the density of each carrier. We obtained very good agreement with a recent theory that assumes a Gaussian distribution of the electrostatic disorder potential. Surprisingly, the temperature dependence of the minimum conductivity of graphene was primarily attributed to the temperature dependence of the disorder potential itself through the carrier charge densities, and not to the temperature dependence of the carrier's mobility. .

Quantum capacitance and compressibility of graphene: The role of Coulomb interactions

“…However, generally it changes only quantitatively, retaining the same form C Q ∝ √ n as in the noninteracting model. That is why experimentally measured C Q and κ are often successfully described in the noninteracting model [4,23,24,26,28,29,31,33,51], but with the higher Fermi velocity v F ≈ 1.1 × 10 6 m/s. The considered theoretical models can be easily generalized to take into account a disorder fluctuating potential in the local density approximation.…”

“…Disorder has been proposed as a source of the observed nonvanishing compressibility and quantum capacitance of graphene at CNP [8,[23][24][25][26][27][28][29]. * Electronic address: lozovik@isan.troitsk.ru…”

Dielectric properties of graphene on transition metal dichalcogenide substrate

“…We now invoke the relation (valid only when one is far away from the charge neutrality point (CNP)) given in Ref. , between the external voltage ( V g ), the geometric gate‐graphene capacitance per unit area, and the chemical potential (for a gated graphene monolayer, given by where Φ 0 is the electrical potential attributed to the residual doping. The sign of the induced carriers is opposite to the sign of the applied gate voltage.…”

“…We now invoke the relation (valid only when one is far away from the charge neutrality point (CNP)) given in Ref. [69], between the external voltage (V g ), the geometric gate-graphene capacitance per unit area, and the chemical potential m ð Þ (for a gated graphene monolayer, given by…”

Дисперсия Объемных Волн В Структуре "Графен--Диэлектрик--Графен"

“…Прежде всего это высокотемпературные сверхпроводники [8], фотонные кристаллы и метаматериалы [9], планарные структуры, содержащие полупроводниковые пленки [10]. Замедление и управление дисперсионными характеристиками волн в направляющих структурах может быть достигнуто также в результате использования при их формировании слоев графена, химический потенциал (ХП) которого существенно зависит от температуры и внешнего электрического поля [11,12]. Слои графена могут использоваться как покрытие диэлектрической сердцевины в планарных волноводах [11,[13][14][15] или в волоконных световодах [16], а также в более сложных структурах.…”