Chemical Patterning of High‐Mobility Semiconducting 2D Bi₂O₂Se Crystals for Integrated Optoelectronic Devices

Abstract

Patterning of high-mobility 2D semiconducting materials with unique layered structures and superb electronic properties offers great potential for batch fabrication and integration of next-generation electronic and optoelectronic devices. Here, a facile approach is used to achieve accurate patterning of 2D high-mobility semiconducting Bi O Se crystals using dilute H O and protonic mixture acid as efficient etchants. The 2D Bi O Se crystal after chemical etching maintains a high Hall mobility of over 200 cm V s at room temperature. Centimeter-scale well-ordered arrays of 2D Bi O Se with tailorable configurations are readily obtained. Furthermore, integrated photodetectors based on 2D Bi O Se arrays are fabricated, exhibiting excellent air stability and high photoresponsivity of ≈2000 A W at 532 nm. These results are one step towards the practical application of ultrathin 2D integrated digital and optoelectronic circuits.

2D Metal Chalcogenides for IR Photodetection

“…Very lately, a new star ternary material Bi 2 O 2 Se joins into the 2D family . Bi 2 O 2 Se possesses high Hall mobility (29 000 cm 2 V −1 s −1 at 1.9 K and 450 cm 2 V −1 s −1 at room temperature) and appropriate bandgap of 0.8 eV, which pave the way for high sensitivity and fast response IR photodetection.…”

Molecular Beam Epitaxy and Electronic Structure of Atomically Thin Oxyselenide Films

“…Oxychalcogenides, which can be regarded as mixing and bridging chalcogenides and oxides together, reactivate their research booms for the remarkable phenomena such as high carrier mobility, [9] thermoelectricity, [10][11][12] ferroelectricity, [13] and superconductivity. [2,9,13,[15][16][17][18][19][20][21][22][23] For example, the bulk Bi 2 O 2 Se crystals show an ultrahigh Hall mobility of ≈280 000 cm 2 V −1 s −1 at low temperature [9] and robust bandgap (immune to Se vacancies) after cleavage. [2,9,13,[15][16][17][18][19][20][21][22][23] For example, the bulk Bi 2 O 2 Se crystals show an ultrahigh Hall mobility of ≈280 000 cm 2 V −1 s −1 at low temperature [9] and robust bandgap (immune to Se vacancies) after cleavage.…”

“…[2,9,13,[15][16][17][18][19][20][21][22][23] For example, the bulk Bi 2 O 2 Se crystals show an ultrahigh Hall mobility of ≈280 000 cm 2 V −1 s −1 at low temperature [9] and robust bandgap (immune to Se vacancies) after cleavage. [16,18,[23][24][25] The present research is mainly focused on the bulk crystals and few-layer or multiplayer samples due to the challenge to faithfully achieve the growth of atomically thin Bi 2 O 2 Se films. Outstanding optoelectronic properties were recently observed in CVD-grown Bi 2 O 2 Se nanoplates.…”

Strong spin–orbit interaction and magnetotransport in semiconductor Bi2O2Se nanoplates

“…nanoplates not only possess a band energy gap, which is desired for applications in planar nanoelectronic logic devices and circuits, but also are stable against oxidation and moisture in the air 6,7 . The electron field-effect mobility of the nanoplates is found to reach ∼450 cm 2 /V⋅s at room temperature.…”