1988
DOI: 10.1016/0022-3093(88)90411-5
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Chemical mechanisms in electroless deposition

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Cited by 25 publications
(5 citation statements)
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“…Between these two atoms, the diffusion rate of P is relatively small compared to that of Ni. 10 Hence, EN-P coating having higher amounts of P involves the movement of more P atoms from a given area per unit time during deposition to achieve segregation of Ni and P. 11 As mentioned before, the general EN-P coating layer contains approximately 10 wt.% P. Since the required P segregation is very large, it prevents the nucleation of face-centered-cubic (FCC) Ni phase which results in an amorphous structure in the as-deposited condition. Other investigators also confirmed the amorphous nature of EN-P coatings with high P content (>7 wt.% P) in its as-deposited condition.…”
Section: Solderability Measurementsmentioning
confidence: 99%
“…Between these two atoms, the diffusion rate of P is relatively small compared to that of Ni. 10 Hence, EN-P coating having higher amounts of P involves the movement of more P atoms from a given area per unit time during deposition to achieve segregation of Ni and P. 11 As mentioned before, the general EN-P coating layer contains approximately 10 wt.% P. Since the required P segregation is very large, it prevents the nucleation of face-centered-cubic (FCC) Ni phase which results in an amorphous structure in the as-deposited condition. Other investigators also confirmed the amorphous nature of EN-P coatings with high P content (>7 wt.% P) in its as-deposited condition.…”
Section: Solderability Measurementsmentioning
confidence: 99%
“…The mechanism of EN-B plating suggests that during EN-B deposition, B atoms are randomly captured on Ni atoms and that the variation in the rate of segregation of Ni and B atoms determines the crystal-structure of the resultant coating. The diffusion rate of the B atom is relatively small compared to that of the Ni atom [30]. Hence, an EN-B coating with a higher B content allows the movement during deposition of more B atoms from a given area per unit time to achieve segregation of Ni and B [31].…”
Section: Resultsmentioning
confidence: 99%
“…This exciton-like surface hydrogen-vacancy state is not the same as the surface exciton that occurs for semiconductors [15 to 171 ; our proposed hydrogen-vacancy state has a high degree of delocalization and a low internal binding energy. It can form weak bonds with surface species, as is implied experimentally in autocatalytic processes [18]. Overlap of exciton-like surface states creates a new level near to E,, with consequent charge transfer which causes the Fermi level to shift to slightly higher energy (Fig.…”
Section: Exciton-like Statesmentioning
confidence: 95%