Chemical-Mechanical Polishing of Metalorganic Chemical-Vapor-Deposited Gold for LSI Interconnection

Hoshino, Masataka; Suehiro, Haruyoshi; Kasai, Kazumi; Komeno, J.

doi:10.1143/jjap.32.l392

Cited by 10 publications

(2 citation statements)

References 4 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…10 220-455 --E (MPsi) 10 18.8 --Dissolution rate (nm/min) [24][25][26] 8 --Polishing rate (nm/min) 10, 27 10-40 --Crystal structure 28 Cubic Octahedral cubic Monoclinic Color 18 Redish metal Redish metal Black From this work, we would like to propose the following performance model for CMP as shown in Fig. Under real CMP conditions, the pad conditioning, polishing performance, pad life, as well as polishing-removal mechanisms, are the response of such changes.…”

Section: Comparison With Real Chemical-mechanical Polishing Processesmentioning

confidence: 99%

Interfacial transfer between copper and polyurethane in chemical-mechanical polishing

Liang

Mogne²,

Martin³

2002

Journal of Elec Materi

View full text Add to dashboard Cite

Section: Comparison With Real Chemical-mechanical Polishing Processesmentioning

confidence: 99%

Interfacial transfer between copper and polyurethane in chemical-mechanical polishing

Liang

Mogne²,

Martin³

2002

Journal of Elec Materi

View full text Add to dashboard Cite

“…However, only very little is known so far about CMP processes of noble metals ͑e.g., Ag, Pt, Ir͒. 4,5 Historically, iridium and platinum were believed to be unsuitable for polishing techniques due to their chemical and mechanical properties. In regular etching experiments iridium is inert to all acids and is not even attacked by aqua regia.…”

mentioning

confidence: 99%

Chemical Mechanical Polishing of Iridium and Iridium Oxide for Damascene Processes

Mainka

Beitel

Schnabel

et al. 2001

J. Electrochem. Soc.

View full text Add to dashboard Cite

In this study, the chemical mechanical polishing (CMP) of iridium and iridium oxide has been investigated. The results show that it is possible to polish this highly inert noble metal and its oxide with removal rates and selectivities that are satisfactory for damascene processes in semiconductor manufacturing. All slurries are based on commercially available abrasives and chemicals. Using blanket wafers, two particular slurry systems have been systematically studied. Concentration variations of abrasive as well as oxidizer and base have been investigated for iridium and iridium oxide, respectively. The dependence of the removal rate on polishing parameters such as time, pressure, and rotational speeds have been investigated. Iridium and iridium oxide removal rates up to 50 and 260 nm/min with selectivities to SiO2 up to 30:1 and 50:1 could be reached, respectively. Based on the results obtained on planar wafers slurries with optimized parameters were applied to structured wafers. The dishing effect is very small (<10 nm) both in small (<1 μm) and larger (10 μm width) structures. Erosion of tetraethyl orthosilicate is in the range between 20 and 40 nm, and the surface roughness (root mean square 0.5-2 nm) measured by atomic force microscopy as well as the depth of scratches (5-15 nm) were comparable to those of copper CMP. Overall, the process performance demonstrated on planar and patterned wafers fully satisfies production requirements. Therefore, these novel polishing processes allow, for the first time, the implementation of noble metal damascene processes in semiconductor manufacturing. © 2001 The Electrochemical Society. All rights reserved.

show abstract

Influence of oxides on friction during Cu CMP

Liang

Martin

Lee³

2001

Journal of Elec Materi

View full text Add to dashboard Cite

Chemical-Mechanical Polishing of Metalorganic Chemical-Vapor-Deposited Gold for LSI Interconnection

Cited by 10 publications

References 4 publications

Interfacial transfer between copper and polyurethane in chemical-mechanical polishing

Interfacial transfer between copper and polyurethane in chemical-mechanical polishing

Chemical Mechanical Polishing of Iridium and Iridium Oxide for Damascene Processes

Influence of oxides on friction during Cu CMP

Contact Info

Product

Resources

About