2012
DOI: 10.3938/jkps.60.388
|View full text |Cite
|
Sign up to set email alerts
|

Chemical mechanical polishing characteristics of ITO thin film prepared by RF magnetron sputtering

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2

Citation Types

0
1
0

Year Published

2016
2016
2024
2024

Publication Types

Select...
3
1
1

Relationship

0
5

Authors

Journals

citations
Cited by 5 publications
(2 citation statements)
references
References 21 publications
0
1
0
Order By: Relevance
“…Lee utilized the high-frequency magnetron sputtering method to cultivate the ITO thin film on a glass substrate. This technique yielded optimal conditions of high removal rate, low resistivity, and high transmittance using the chemical mechanical polishing process [20]. Additionally, Lee and Gupta's research indicated that CMP resulted in increased surface uniformity and improved transmittance of ITO thin films [21,22].…”
Section: Introductionmentioning
confidence: 97%
“…Lee utilized the high-frequency magnetron sputtering method to cultivate the ITO thin film on a glass substrate. This technique yielded optimal conditions of high removal rate, low resistivity, and high transmittance using the chemical mechanical polishing process [20]. Additionally, Lee and Gupta's research indicated that CMP resulted in increased surface uniformity and improved transmittance of ITO thin films [21,22].…”
Section: Introductionmentioning
confidence: 97%
“…Increasing the internal compressive stress will improve the hardness of the ITO thin film. Lee et al [24] compared chemical mechanical polishing with different process parameters to improve the surface quality of ITO films, and compared the electrical and optical properties of the polished ITO films. The optimal processing conditions with high removal rate, low non-uniformity, low resistivity, and high transmittance were obtained.…”
Section: Introductionmentioning
confidence: 99%