Chemical manipulation of edge-contact and encapsulated graphene by dissociated hydrogen adsorption

Abstract

We investigate the hydrogenation in the h-BN/graphene/h-BN heterostructure and report the successful intercalation and modification of electrical properties.

Tuning the electronic structure of single-walled carbon nanotube by high-pressure H2 exposure

“…This electron doping effect of the graphitic surface due to hydrogenation has been studied by theoretical [25,26] and experimental [27,28] approaches. Recently, we also reported on the electron doping effect of single-layer, bilayer, and multilayer graphene by high-pressure H 2 exposure [15][16][17][18]. The electrical conductivity, thermoelectric power, and Raman spectroscopy showed consistent results, indicating the C-H bond formation and electron doping effect [16,17].…”

“…Recently, we reported on the n-type doping phenomena of graphene-based devices by dissociative hydrogen adsorption [15][16][17][18]. Because SWNT is regarded as cylindrical shape of a graphene sheet, we expect the n-type doping effect on SWNT by exposure to high-pressure H 2 at high temperature, as is the case in graphene.…”

Tuning Hydrogen Adsorption on Graphene by Gate Voltage

“…After atomic deuterium exposure, for any value of V h , V CNP had shifted to more negative values. This n-doping of graphene is attributed to deuterium adsorption, hydrogen being an electron donor for graphene. − The magnitude of the V CNP shift depends on V h . The V CNP shift was found to be −20, −8, −1, and −1.5 V for V h = −30, −20, 0, and +30 V, respectively.…”