1998
DOI: 10.1063/1.121944
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Chemical kinetics of mobile-proton generation and annihilation in SiO2 thin films

Abstract: Ellipsometric study of the polysilicon/thin oxide/single-crystalline silicon structure and its change upon annealing

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Cited by 24 publications
(8 citation statements)
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“…an electron from the Si, as compared to the probability of electron capture by a nearby hole, is consistent with electrical and spectroscopic measurements performed by Vanheusden et al [70], [74], and as also emphasized in the discussion of ELDRS in [75].…”
Section: B Interface Traps In Mos Devicessupporting
confidence: 90%
“…an electron from the Si, as compared to the probability of electron capture by a nearby hole, is consistent with electrical and spectroscopic measurements performed by Vanheusden et al [70], [74], and as also emphasized in the discussion of ELDRS in [75].…”
Section: B Interface Traps In Mos Devicessupporting
confidence: 90%
“…33 Their data were consistent with diffusion-limited growth from the edges of the device. Furthermore, the final proton density depended on the rate at which the sample was cooled.…”
Section: Discussionmentioning
confidence: 56%
“…Mobile charges, M, such as Na + or K + can be introduced due to poor handling or contaminated quartz chambers used for the thermal oxide growth. More recently, there have been reports that proton, H + , can be an important mobile charge species 33 . This schematic representation indeed oversimplies the more complex chemical nature of the defects, which have been more rigorously identified chemically through the power of EPR-related techniques 34 .…”
Section: Gate Oxide Defect Mitigationmentioning
confidence: 99%