Chemical kinetics of mobile-proton generation and annihilation in SiO2 thin films

Vanheusden, K.; Warren, W. L.; Fleetwood, D.M.; Schwank, J.R.; Shaneyfelt, M.R.; Draper, B.L.; Winokur, P.S.; Devine, R. A. B.; Archer, Leo; Brown, George; Wallace, Robert M.

doi:10.1063/1.121944

Cited by 24 publications

(8 citation statements)

References 13 publications

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“…an electron from the Si, as compared to the probability of electron capture by a nearby hole, is consistent with electrical and spectroscopic measurements performed by Vanheusden et al [70], [74], and as also emphasized in the discussion of ELDRS in [75].…”

Section: B Interface Traps In Mos Devicessupporting

confidence: 90%

Quantum Mechanical Modeling of Radiation-Induced Defect Dynamics in Electronic Devices

Shen

Puzyrev

Fleetwood

et al. 2015

IEEE Trans. Nucl. Sci.

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Density functional theory (DFT) has emerged as a powerful tool to model defect properties and dynamics at the quantum mechanical level. Results from targeted DFT calculations can provide valuable insight into the atomistic nature of radiation-induced defect phenomena in microelectronics. This review describes the foundations of DFT, its implementations, and defect calculations. Illustrative examples from recent studies are presented in which DFT calculations, combined with experiments, have led to new insights into the microscopic processes that lead to the observed radiation response. These include GaN/AlGaN HEMTs, proton-induced interface-trap formation at the interface, and the role of hydrogen in enhanced low-dose-rate sensitivity (ELDRS) in bipolar devices and ICs.

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Section: B Interface Traps In Mos Devicessupporting

confidence: 90%

Quantum Mechanical Modeling of Radiation-Induced Defect Dynamics in Electronic Devices

Shen

Puzyrev

Fleetwood

et al. 2015

IEEE Trans. Nucl. Sci.

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“…33 Their data were consistent with diffusion-limited growth from the edges of the device. Furthermore, the final proton density depended on the rate at which the sample was cooled.…”

Section: Discussionmentioning

confidence: 56%

Spontaneous ionization of hydrogen atoms at theSi−SiO2interface

2004

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We present a series of electronic structure calculations that demonstrate a mechanism for spontaneous ionization of hydrogen at the Si-SiO 2 interface. Specifically, we show that an isolated neutral hydrogen atom will spontaneously give up its charge and bond to a threefold coordinated oxygen atom. We refer to this entity as a proton. We have calculated the potential surface and found it to be entirely attractive. In contrast, hydrogen molecules will not undergo an analogous reaction. We relate these calculations both to proton generation experiments and to hydrogen plasma experiments.

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“…Mobile charges, M, such as Na + or K + can be introduced due to poor handling or contaminated quartz chambers used for the thermal oxide growth. More recently, there have been reports that proton, H + , can be an important mobile charge species 33 . This schematic representation indeed oversimplies the more complex chemical nature of the defects, which have been more rigorously identified chemically through the power of EPR-related techniques 34 .…”

Section: Gate Oxide Defect Mitigationmentioning

confidence: 99%

Synergy between quantum computing and semiconductor technology

Verberk

Michalak²,

Versluis³

et al. 2022

37th European Mask and Lithography Conference

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As part of the National Agenda for Quantum Technology, QuTech (TU Delft and TNO) has agreed to make quantum technology accessible to society and industry via its full-stack prototype: Quantum Inspire. This system includes two different types of programmable quantum chips: circuits made from superconducting materials (transmons), and circuits made from silicon-based materials that localize and control single-electron spins (spin qubits). Silicon-based spin qubits are a natural match to the semiconductor manufacturing community, and several industrial fabrication facilities are already producing spin-qubit chips. Here, we discuss our latest results in spin-qubit technology and highlight where the semiconducting community has opportunities to drive the field forward. Specifically, developments in the following areas would enable fabrication of more powerful spin-qubit based quantum computing devices: circuit design rules implementing cryogenic device physics models, high-fidelity gate patterning of low resistance or superconducting metals, gate-oxide defect mitigation in relevant materials, silicon-germanium heterostructure optimization, and accurate magnetic field generation from on-chip micromagnets.

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Chemical kinetics of mobile-proton generation and annihilation in SiO2 thin films

Abstract: Ellipsometric study of the polysilicon/thin oxide/single-crystalline silicon structure and its change upon annealing

Cited by 24 publications

References 13 publications

Quantum Mechanical Modeling of Radiation-Induced Defect Dynamics in Electronic Devices

Quantum Mechanical Modeling of Radiation-Induced Defect Dynamics in Electronic Devices

Spontaneous ionization of hydrogen atoms at theSi−SiO2interface

Synergy between quantum computing and semiconductor technology

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