2016
DOI: 10.1016/j.tsf.2016.04.035
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Chemical etching of Tungsten thin films for high-temperature surface acoustic wave-based sensor devices

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Cited by 8 publications
(4 citation statements)
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“…10-13. W metallic 4f 7/2 and 4f 5/2 peaks are located at 31.6 and 33.8 eV and those of WO 3 peaks are located at 35.6 and 37.8 eV, 21,22 respectively, as shown in Fig. 4a.…”
Section: Resultsmentioning
confidence: 80%
“…10-13. W metallic 4f 7/2 and 4f 5/2 peaks are located at 31.6 and 33.8 eV and those of WO 3 peaks are located at 35.6 and 37.8 eV, 21,22 respectively, as shown in Fig. 4a.…”
Section: Resultsmentioning
confidence: 80%
“…While most of our channels were made based on a 25 μm mandrel, we have successfully tested larger diameter wires up to 100 μm. Tungsten wire is commercially available down to 15 μm and can be etched to smaller diameters with H 2 O 2 , perhaps most conveniently after the wire has already been fixed in the molding structure. Making smaller channels should thus be possible, especially as the polymer expands in the latter stage, releasing the wire.…”
Section: Resultsmentioning
confidence: 99%
“…A. 4 In the second term on the right-hand side of Eq. (A13), f is the other fitting parameter of the model and represents the fraction of the discharge voltage falling over the IR.…”
Section: A25 Argon Ions Dn Armentioning
confidence: 99%
“…Due to their unique thermophysical, electrical and mechanical properties, tungsten (W) films have application in various industrial and research fields. For instance, W films have been studied for microelectronics industry [1,2], x-ray lithography [3] and surface acoustic wave sensors production [4]. Furthermore, they are also exploited in the energy sector [5][6][7][8].…”
Section: Introductionmentioning
confidence: 99%