Chemical etching of silicon assisted by graphene oxide under negative electric bias
Yuta Goto,
Shuta Sakamoto,
Toru Utsunomiya
et al.
Abstract:Chemical etching of silicon assisted by graphene oxide (GO) is attracting attention as a new method to fabricate micro- or nano- structures. GO promotes the reduction of an oxidant, and holes are injected into silicon, resulting in the preferential dissolution of the silicon under GO. We developed a new etching method that applies a negative bias to the silicon substrate. The silicon under GO was more selectively etched in an etchant consisting of hydrofluoric acid and nitric acid. We assume that this is attri… Show more
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