Chemical Etching of Silicon

Schwartz, B.; Robbins, Harry

doi:10.1149/1.2428090

Cited by 195 publications

(160 citation statements)

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“…Although present etchant is relatively fast compared to other etchants, it can produce a poor surface finish as reported in literature (Abott et al, 1993). Thus, Fast etched planes covered with irregularities such as microscopic pyramids (Schwartz and Robbin, 1961). The resolution of scanning tunneling microscope (STM) is direct consequence of the quantum mechanical tunneling between the tip and surface.…”

Section: Fig 2: Anisotropic Er Of Silicon With Its Arrhenius Plotmentioning

confidence: 88%

“…Taking out silicon atoms from its surface with time for a given temperature and concentration of KOH is not same for different plane orientations. Its flexibility is exploited to design microstructures and devices with fraction of micron resolution (Schwartz and Robbin, 1961) nowadays.…”

Section: Introductionmentioning

confidence: 99%

“…Thus, pyramid formations (Abott et al, 1993) can be related to poor bubble detachment, precluding diffusion to specific point on the surface. However, anisotropic etching has provided as a tool for shaping of silicon structures and as an evaluation of protective surface films on silicon substrate (Schwartz and Robbin, 1961). Due to diverse functional dependence of etch rate (ER), a complete study of this system is extremely complicated.…”

Section: Introductionmentioning

confidence: 99%

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Thermal Induced Conductance of KOH Etched Silicon Surface

Lamichhane

1970

Kathmandu University J of Sci, Engineering & Technol

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Anisotropic KOH etch rate of silicon is found to vary with thermal agitation along with crystal plane orientation. In this work, experimental results of etch rate is found with their unusual values of activation energy along different planes. The various sites that an atom can occupy are not equivalent of their energy; some are more favorable to removal than others. In this paper attention is given to demonstrate thermal activation influences the behavior of etching mechanism as well as surface morphology. Low-voltage contact mode atomic force microscopy (AFM) has been employed to analyze the morphology of the etched silicon surface at relevant temperature. With temperature evolution the width of the forbidden energy gap is going down and hence conductivity is rises.

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Section: Fig 2: Anisotropic Er Of Silicon With Its Arrhenius Plotmentioning

confidence: 88%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Thermal Induced Conductance of KOH Etched Silicon Surface

Lamichhane

1970

Kathmandu University J of Sci, Engineering & Technol

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“…The HNA etching solution is very aggressive and the etching rate is strongly dependent on the concentration and temperature of the acid. 76 A mixture of HNO 3 (69%) with HF (49%) in a ratio 2:1 gives etch rates of around 50 lm/min. 77 The aggressive etching characteristic of HNA solution reduces the range of masking layers that can be used.…”

Section: Wet Etchingmentioning

confidence: 99%

A practical guide for the fabrication of microfluidic devices using glass and silicon

Iliescu¹,

Taylor²,

Avram³

et al. 2012

Biomicrofluidics

302

207

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This paper describes the main protocols that are used for fabricating microfluidic devices from glass and silicon. Methods for micropatterning glass and silicon are surveyed, and their limitations are discussed. Bonding methods that can be used for joining these materials are summarized and key process parameters are indicated. The paper also outlines techniques for forming electrical connections between microfluidic devices and external circuits. A framework is proposed for the synthesis of a complete glass/silicon device fabrication flow. I. WHY USE SILICON AND GLASS IN MICRO-AND NANO-FLUIDIC APPLICATIONS?Micro-and nano-fluidic technology continues to be embraced by biologists, 1-3 chemists, 4 and engineers throughout academia and industry. As its applications have expanded, there has been an explosion in the range of materials and processes used to fabricate these devices. The earliest microfluidic devices (e.g., gas 5 and liquid 6 chromatography devices) were made from silicon and glass and borrowed processes directly from semiconductor and microelectromechanical systems (MEMS) manufacturing. 7 Now, however, many researchers have moved away from silicon and glass, and instead use cast elastomers such as polydimethylsiloxane (PDMS)-which is ideal for swift prototyping-or thermoplastic polymers, which can be hot-embossed or injection-molded and are well suited to inexpensive manufacturing. Yet, there remain many applications where glass and silicon offer advantages over polymeric materials. In this paper, we highlight these advantages and offer a framework for selecting fabrication processes when using silicon and glass. A. The dominance of soft lithographyOver the last decade, PDMS has become virtually the default material for forming microfluidic devices, 8 because of the sheer ease with which it can be cast on to a micro-scale mould and then strongly bonded to glass. 9 The elastomeric nature of the material has been exploited to integrate fluidic valves and pumps on-chip and has simplified the production of multi-layer devices because the soft layers readily conform to each other. 10,11 Yet, the low stiffness (usually <1 MPa) of PDMS relative to amorphous thermoplastics, silicon, and glass has its own a) Authors to whom correspondence should be addressed. Electronic addresses: ciliescu@ibn.a-star.edu.sg and hkt@ntu.edu.sg. 6, 016505 (2012) drawbacks. High aspect-ratio channels are notoriously difficult to fabricate in PDMS because of their propensity to collapse. 12 Moreover, difficulties in automating the handling of such a soft material have hampered efforts to scale up PDMS device manufacturing. Meanwhile, PDMS's high oxygen and water permeabilities have proved both a blessing and a curse in different applications.The hydrophobic nature of PDMS can be an important consideration for some biological applications. In drug screening applications, for example, hydrophobic drugs as well as metabolites (urea or albumin) can be absorbed into the device's material due to hydrophobic--hydrophobic interaction...

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“…A simple two-step etching mechanism has been proposed [3][4][5]. In this model the formation of an intermediate SiO2 layer by nitric acid (Eq.…”

Section: Introductionmentioning

confidence: 99%

HF-HNO 3 -H 2 SO 4 /H 2 O Mixtures for Etching Multicrystalline Silicon Surfaces: Formation of NO2+${\rm{N}}{{\rm{O}}_{{2^ + }}}$ , Reaction Rates and Surface Morphologies

Lippold¹,

Patzig-Klein²,

Kroke³

2018

Energyo

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The reaction behavior of HF-HNO3-H2O etching mixtures, which are frequently used for texturing silicon surfaces, is significantly influenced by the addition of sulfuric acid. w (97 %-H2SO4) < 0.3. For higher concentrations of sulfuric acid, H 2SO4 can be considered as a diluent. In order to investigate the influence of the sulfuric acid at constant HF and HNO3 quantities, fuming HNO3 (100 %) was used and the water in the mixtures successively replaced by H2SO4. A sudden increase of etching rates was found for sulfuric acid concentrations around 6 mol L-1 correlating with the characteristic color of the etching solutions. Decreased reaction rates at > 7 mol L-1 H2SO4 are attributed to high solution viscosities and the formation of fluorosulfuric acid. Generally, in HF-HNO3-H2SO4/H2O etching mixtures a reduced dissociation of nitric acid, the formation of nitronium ions, the solubility of neutral nitrogen intermediates (e. g. NO2, N2O3), as well as other effects influence the attack of silicon surfaces. The structure of etched silicon surfaces was investigated by means of scanning electron (SEM) and laser scanning microscopy (LSM). The morphologies are influenced most significantly by the relative amounts of sulfuric acid. Unexpectedly, in nitronium ion-containing mixtures rough surfaces with pore-like etching pits are generated.

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Chemical Etching of Silicon

Cited by 195 publications

References 7 publications

Thermal Induced Conductance of KOH Etched Silicon Surface

Thermal Induced Conductance of KOH Etched Silicon Surface

A practical guide for the fabrication of microfluidic devices using glass and silicon

HF-HNO 3 -H 2 SO 4 /H 2 O Mixtures for Etching Multicrystalline Silicon Surfaces: Formation of NO2+${\rm{N}}{{\rm{O}}_{{2^ + }}}$ , Reaction Rates and Surface Morphologies

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