Chemical etching of freestanding N-polar GaN in control of the surface morphology

Chen, Hui; Han, Sha; Liu, Zhenghui; Zhang, Chunyu; Huang, Zhiwen; Chen, Kebei; Song, Wentao; Wang, Jianfeng; Xu, Gengzhao; Xu, Ke

doi:10.1016/j.apsusc.2021.152125

Cited by 4 publications

(1 citation statement)

References 34 publications

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“…Chen et al utilized NaOH and phosphoric (H 3 PO 4 ) acid at room temperature for surface treatment. They employed step-by-step etching and discovered hexagonal pyramids in three-step etching process [6]. Sabria et al analyzed the angle-resolved x-ray photoelectron spectroscopy (XPS) data for the pristine GaN and H 3 PO 4 wet etched GaN.…”

Section: Introductionmentioning

confidence: 99%

Micro-Raman analysis of HVPE grown etched GaN epilayer with porous formation

Posha,

Padmanabhan,

Basha S

2023

Semicond. Sci. Technol.

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The GaN epilayer grown by hydride vapour phase epitaxy was wet etched by phosphoric acid as the etchant. X-ray diffraction confirms that the GaN has a wurtzite structure. Scanning Electron Microscopy shows various sizes of hexagonal pits for different times of etchant reactions. Atomic Force Microscopy shows increase in surface roughness with different etchant rate. The Photoluminescence gives a 3.4 eV luminescence for the pristine GaN epilayer. In the etched films, the deep-level defect belonging to yellow and green luminescence was found. The deconvoluted Ga 3d peaks of etched samples show Ga-rich epilayers. Micro-Raman spectroscopy is a non-destructive method for measuring carrier concentration, phonon lifetime and strain using A¬1(LO) spectra of Raman vibration mode was utilized via the Lorentz fitting method. The carrier concentration increases while the phonon lifetime decreases with etching rate. Overall, in the 9-minute reaction, the epilayer was etched heavily with a perfect hexagonal etch pit structure.

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Section: Introductionmentioning

confidence: 99%