Chemical effects in C60 irradiation of polymers

Möllers, R.; Tuccitto, Nunzio; Torrisi, V.; Niehuis, E.; Licciardello, Antonino

doi:10.1016/j.apsusc.2006.02.083

Cited by 58 publications

(86 citation statements)

References 15 publications

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“…Recent studies of the effect of the reduction in molecular weight on sputter yields confirm, in detail, that strong enhancement [20,21] of the sputtering yield will occur for the monomer. In a similar manner, Möllers et al [22], in a study of PMMA sputtered by 10 keV C 60 + , find that the depth resolution for 200 nm thick films was better at elevated and reduced temperatures and, again, worst at 20°C. The sputtering yield had doubled at 140°C and tripled at 180°C.…”

Section: Introductionmentioning

confidence: 78%

Systematic Temperature Effects in the Argon Cluster Ion Sputter Depth Profiling of Organic Materials Using Secondary Ion Mass Spectrometry

Seah

Havelund

Gilmore

2016

J. Am. Soc. Mass Spectrom.

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Abstract. A study is presented of the effects of sample temperature on the sputter depth profiling of two organic materials, NPB (N,N′-Di(1-naphthyl)-N,N′-diphenyl-(1,1′-biphenyl)-4,4′-diamine) and Irganox 1010, using a 5 keV Ar 2000 + cluster ion beam and analysis by secondary ion mass spectrometry. It is shown that at low temperatures, the yields increase slowly with temperature in accordance with the Universal Sputtering Yield equation where the energy term is now modified by Trouton's rule. This occurs up to a transition temperature, T T , which is, in turn, approximately 0.8T M , where T M is the sample melting temperature in Kelvin. For NPB and Irganox 1010, these transition temperatures are close to 15°C and 0°C, respectively. Above this temperature, the rate of increase of the sputtering yield rises by an order of magnitude. During sputtering, the depth resolution also changes with temperature with a very small change occurring below T T . At higher temperatures, the depth resolution improves but then rapidly degrades, possibly as a result first of local crater surface diffusion and then of bulk inter-diffusion. The secondary ion spectra also change with temperature with the intensities of the molecular entities increasing least. This agrees with a model in which the molecular entities arise near the crater rim. It is recommended that for consistent results, measurements for organic materials are always made at temperatures significantly below T T or 0.8 T M , and this is generally below room temperature.

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Section: Introductionmentioning

confidence: 78%

Systematic Temperature Effects in the Argon Cluster Ion Sputter Depth Profiling of Organic Materials Using Secondary Ion Mass Spectrometry

Seah

Havelund

Gilmore

2016

J. Am. Soc. Mass Spectrom.

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“…These data strongly support the idea that the yield volume must be sufficiently large to remove as much of the damage caused by previous impacts as possible. 5 For Alq 3 , damage accumulates so that, within the first 50 nm, the yield volume has changed from being typical of organic materials to being typical of an inorganic material such as silicon (3.9 nm 3 per ion at 30 keV). 8 It should be noted that the characteristic ions for Alq 3 have rather different disappearance crosssections (which describe the exponential decay of secondary ion intensity) 6 3 per ion (yield: 265 repeat units per incident ion) at 10 keV and 45°incidence, which are comparable to the values found for PLA and Irganox 1010.…”

Section: Resultsmentioning

confidence: 99%

“…The effect of temperature and the nature of the material itself can influence sputtering yields by up to Ł Correspondence to: A. G. Shard, Quality of Life Division, National Physical Laboratory, Teddington, Middlesex, TW11 0LW, UK. E-mail: alex.shard@npl.co.uk an order of magnitude, 5 but the underlying mechanisms are unclear. Without information on parameters that affect sputtering yields, obtaining reliable depth scales, depth resolutions and measurement of the extent of damage is impossible.…”

Section: Introductionmentioning

confidence: 99%

Measurement of sputtering yields and damage in C₆₀ SIMS depth profiling of model organic materials

Shard

Brewer

Green

et al. 2006

Surface & Interface Analysis

126

183

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Sputter-depth profiles of model organic thin films on silicon using C 60 primary ions have been employed to measure sputtering yields and depth resolution parameters. We demonstrate that some materials (polylactide, Irganox 1010) have a constant and high sputtering yield, which varies linearly with the primary ion energy, whereas another material (Alq 3 ) has lower, fluence-dependent sputtering yields. Analysis of multi-layered organic thin films reveals that the depth resolution is a function of both primary ion energy and depth, and the sputtering yield depends on the history of sputtering. We also show that ∼30% of repeat units are damaged in the steady-state regime during polylactide sputtering.  Crown

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“…This is due to the chemical nature of PMMA which is a polymer that undergoes preferentially main chain scission under irradiation, causing molecular fragmentation. [15,16] This fragmentation is favorable in the SIMS process as it helps the ejection of molecular fragments under irradiation. The general trend with increasing energy, observed in Fig.…”

Section: Sputtering Yield Measurementsmentioning

confidence: 97%

Molecular depth profiling with reactive ions, or why chemistry matters in sputtering

Houssiau¹,

Mine²

2011

Surface & Interface Analysis

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We have shown in recent papers that low-energy Cs + ions can be used successfully for molecular depth profiling of polymers. This paper reviews a few key experiments that provide a better understanding of the mechanisms involved in reactive ion depth profiling. It is shown that damaged polymer (polystyrene and polycarbonate) layers, initially bombarded with high-energy gallium irradiation, can be efficiently removed by low-energy Cs + sputtering so that the polymer molecular signal is restored. The role played by the primary ion energy is then studied by measuring the sputtering yields at different energies on polystyrene, poly (methylmethacrylate) and polycarbonate. Depth profiles on PC were also obtained at six different Cs + energies ranging from 150 to 1 keV. The best conditions were obtained at 200 and 250 eV, and the depth profile quality degrades above 500 eV. Finally, the negative ionization enhancement due to Cs implantation is studied by means of the Cs/Xe cosputtering method. All those experiments are consistent with a polymer cross-linking inhibition model, due to reactions between the implanted Cs atoms and the free radicals generated by ion irradiation. The main effect in molecular depth profiling with reactive ions is, therefore, a chemical effect.

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Chemical effects in C60 irradiation of polymers

Cited by 58 publications

References 15 publications

Systematic Temperature Effects in the Argon Cluster Ion Sputter Depth Profiling of Organic Materials Using Secondary Ion Mass Spectrometry

Systematic Temperature Effects in the Argon Cluster Ion Sputter Depth Profiling of Organic Materials Using Secondary Ion Mass Spectrometry

Measurement of sputtering yields and damage in C₆₀ SIMS depth profiling of model organic materials

Molecular depth profiling with reactive ions, or why chemistry matters in sputtering

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Chemical effects in C60 irradiation of polymers

Cited by 58 publications

References 15 publications

Systematic Temperature Effects in the Argon Cluster Ion Sputter Depth Profiling of Organic Materials Using Secondary Ion Mass Spectrometry

Systematic Temperature Effects in the Argon Cluster Ion Sputter Depth Profiling of Organic Materials Using Secondary Ion Mass Spectrometry

Measurement of sputtering yields and damage in C60 SIMS depth profiling of model organic materials

Molecular depth profiling with reactive ions, or why chemistry matters in sputtering

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Measurement of sputtering yields and damage in C₆₀ SIMS depth profiling of model organic materials